IRF9389PBF Datasheet, PDF (1/14 Pages) International Rectifier – High and Low Side Switches for Inverter

N-CH P-CH
V_DS
30 -30 V
R_{DS(on) max}
27
64 m
Q_{g (typical)}
6.8
8.1 nC
I_D
6.8 -4.6 A
(@T_A = 25°C)
IRF9389PbF
HEXFET^® Power MOSFET
N-CHANNEL MOSFET
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
P-CHANNEL MOSFET
Top View
SO-8
Applications
l High and Low Side Switches for Inverter
l High and Low Side Switches for Generic Half-Bridge
Features
Benefits
High and low-side MOSFETs in a single package
Increased power density
High-side P-Channel MOSFET
Easier drive circuitry
Industry-standard pinout
results in Multi-vendor compatibility
Compatible with existing surface mount techniques
RoHS compliant containing no Lead, no Bromide and no Halogen
 ^{Easier manufacturing}
Environmentally friendlier
MSL1, Consumer qualification
Increased reliability
Base Part Number Package Type
IRF9389PbF
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable part number
IRF9389PbF
IRF9389TRPbF
Absolute Maximum Ratings
Parameter
V_GS
Gate-to-Source Voltage
I_D @ T_A = 25°C Continuous Drain Current, V_GS @ 10V
I_D @ T_A = 70°C
I_DM
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
P_D @T_A = 25°C Power Dissipation
P_D @T_A = 70°C Power Dissipation
Linear Derating Factor
T_J
Operating Junction and
T_STG
Storage Temperature Range
Thermal Resistance
Parameter
R_JL
R_JA
f Junction-to-Drain Lead
e Junction-to-Ambient
Max.
N-Channel P-Channel
±20
±20
6.8
-4.6
5.4
-3.7
34
-23
2.0
1.3
0.016
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max
Units
20
°C/W
62.5
1
www.irf.com © 2012 International Rectifier
January 14, 2013