IRF9383MPBF_15 Datasheet, PDF (2/10 Pages) International Rectifier – Isolation Switch for Input Power or Battery Application

IRF9383MPbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BV_DSS
ΔΒV_DSS/ΔT_J
R_DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
-30 ––– –––
––– 0.0159 –––
––– 2.3 2.9
––– 3.8 4.8
V VGS = 0V, ID = -250μA
V/°C ^{Reference to 25°C, I}D ^{= -1.0mA}
hh _mΩ
V_GS = -10V, I_D = -22A
V_GS = -4.5V, I_D = -18A
V_GS(th)
ΔV_GS(th)/ΔT_J
I_DSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
-1.3
–––
-1.8
-5.9
-2.4
–––
V
mV/°C
V_DS
=
V_GS,
I_D
=
-150μA
––– ––– -1.0 _μA ^VDS ^{= -24V, V}GS ^{= 0V}
––– ––– -150
V_DS = -24V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– -100 _nA ^VGS ^{= -20V}
Gate-to-Source Reverse Leakage
––– ––– 100
V_GS = 20V
gfs
Forward Transconductance
56 ––– ––– S ^VDS ^{= -10V, I}D ^{= -18A}
Q_g
Total Gate Charge
––– 130 –––
V_DS = -15V, V_GS = -10V, I_D = -18A
Q_g
Total Gate Charge
––– 67 –––
Q_gs1
Pre- Vth Gate-to-Source Charge
––– 12 –––
V_DS = -15V
Q_gs2
Post -Vth Gate-to-Source Charge
––– 9.4 ––– nC V_GS = -4.5V
Q_gd
Gate-to-Drain Charge
––– 29 –––
I_D = -18A
Q_godr
Gate Charge Overdrive
––– 16.6 –––
See Fig.15
Q_sw
Switch charge (Q_gs2 + Q_gd)
Q_oss
Output Charge
––– 38.4 –––
––– 59 –––
nC VDS = -24V, VGS = 0V
R_G
Gate Resistance
t_d(on)
Turn-On Delay Time
t_r
Rise Time
t_d(off)
Turn-Off Delay Time
––– 6.5 –––
––– 29 –––
––– 160 –––
––– 115 –––
Ω
Ãh V_DD = -15V, V_GS = -4.5V
ns ^{ID = -18A}
R_G = 1.8Ω
t_f
Fall Time
C_iss
Input Capacitance
C_oss
Output Capacitance
––– 110 –––
––– 7305 –––
––– 1780 –––
See Fig.17
V_GS = 0V
pF V_DS = -15V
C_rss
Reverse Transfer Capacitance
Diode Characteristics
––– 1030 –––
ƒ = 1.0KHz
Parameter
Min. Typ. Max. Units
Conditions
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
g (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
––– ––– -114
––– ––– -180
––– ––– -1.2
MOSFET symbol
D
showing the
A
integral reverse
G
p-n junction diode.
S
h _V T_J = 25°C, I_S = -18A, V_GS = 0V
––– 52 78 ns ^TJ ^{= 25°C, I}F ^{= -18A, ,V}DD ^{= -15V}
h ––– 315 470 nC di/dt = 500A/μs
Notes:
† Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
www.irf.com © 2015 International Rectifier Submit Datasheet Feedback
June 2, 2015