IRF840LCS Datasheet, PDF (2/10 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

IRF840LCS/LCL
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
V_(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
g_fs
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
L_S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
Min. Typ. Max. Units
500 ––– ––– V
––– 0.63 ––– V/°C
––– ––– 0.85 Ω
2.0 ––– 4.0 V
4.0 ––– ––– S
––– ––– 25 _µA
––– ––– 250
––– ––– 100
nA
––– ––– -100
––– ––– 39
––– ––– 10 nC
––– ––– 19
––– 12 –––
––– 25 –––
ns
––– 27 –––
––– 19 –––
––– _7.5 ––– nH
––– 1100 –––
––– 170 ––– pF
––– 18 –––
Conditions
V_GS = 0V, I_D = 250µA
Reference to 25°C, I_D = 1mA…
V_GS = 10V, I_D = 4.8A „
V_DS = V_GS, I_D = 250µA
V_DS = 50V, I_D = 4.8A„
V_DS = 500V, V_GS = 0V
V_DS = 400V, V_GS = 0V, T_J = 125°C
V_GS = 20V
V_GS = -20V
I_D = 8.0A
V_DS = 400V
V_GS = 10V, See Fig. 6 and 13 „…
V_DD = 250V
I_D = 8.0A
R_G = 9.1Ω
R_D = 30Ω, See Fig. 10 „…
Between lead,
and center of die contact
V_GS = 0V
V_DS = 25V
ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) …
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 8.0
A ^{showing the}
integral reverse
G
––– ––– 28
p-n junction diode.
S
––– ––– 2.0 V T_J = 25°C, I_S = 8.0A, V_GS = 0V „
––– 490 740 ns T_J = 25°C, I_F = 8.0A
––– 3.0 4.5 µC di/dt = 100A/µs „…
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
‚ Starting T_J = 25°C, L = 14mH
R_G = 25Ω, I_AS = 8.0A. (See Figure 12)
ƒ I_SD ≤ 8.0A, di/dt ≤ 100A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C
… Uses IRF840LC data and test conditions
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended soldering techniques refer to application note #AN-994.
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