IRF840LCS Datasheet, PDF (1/10 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

l Ultra Low Gate Charge
l Reduced Gate Drive Requirement
l Enhanced 30V V_GS Rating
l Reduced C_ISS, C_OSS, C_RSS
l Extremely High Frequency Operation
G
l Repetitive Avalanche Rated
Description
This new series of low charge HEXFET^® power MOSFETs
achieve significant lower gate charge over conventional
MOSFETs. Utilizing the new LCDMOS (low charge
device MOSFETs) technology, the device improvements
are achieved without added product cost, allowing for
reduce gate drive requirements and total system savings.
In addition, reduced switching losses and improved
efficiency and achievable in a variety of high frequency
applications. Frequencies of a few MHz at high current
are possible using the new low charge MOSFETs.
These device improvements combined with the proven
ruggedness and reliability that characterize of HEXFET
power MOSFETs offer the designer a new power
transistor standard for switching applications.
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_A = 25°C
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V…
Continuous Drain Current, V_GS @ 10V…
Pulsed Drain Current …
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
R_θJC
R_θJA
www.irf.com
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mounted,steady-state)**
PD- 93766
IRF840LCS
IRF840LCL
HEXFET^® Power MOSFET
D
V_DSS = 500V
R_DS(on) = 0.85Ω
I_D = 8.0A
S
D²Pak
IRF840LCS
TO-262
IRF840LCL
Max.
8.0
5.1
28
3.1
125
1.0
± 30
510
8.0
13
3.5
-55 to + 150
300 (1.6mm from case)
Typ.
–––
–––
Max.
1.0
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
1/3/2000