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| IRF830APBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRF830APbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
Min. Typ.
500 âââ
âââ 0.60
âââ âââ
2.0 âââ
âââ âââ
âââ âââ
âââ âââ
âââ âââ
Max.
âââ
âââ
1.4
4.5
25
250
100
-100
Units
V
â¦
V
µA
nA
Conditions
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 3.0A
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs
Forward Transconductance
2.8 âââ âââ
Qg
Total Gate Charge
âââ âââ 24
Qgs
Gate-to-Source Charge
âââ âââ 6.3
Qgd
Gate-to-Drain ("Miller") Charge
âââ âââ 11
td(on)
Turn-On Delay Time
âââ 10 âââ
tr
Rise Time
âââ 21 âââ
td(off)
Turn-Off Delay Time
âââ 21 âââ
tf
Fall Time
âââ 15 âââ
Ciss
Input Capacitance
âââ 620 âââ
Coss
Output Capacitance
âââ 93 âââ
Crss
Reverse Transfer Capacitance
âââ 4.3 âââ
Coss
Output Capacitance
âââ 886 âââ
Coss
Output Capacitance
âââ 27 âââ
Coss eff. Effective Output Capacitance
Avalanche Characteristics
âââ 39 âââ
Units
S
nC
ns
pF
Conditions
VDS = 50V, ID = 3.0A
ID = 5.0A
VDS = 400V
VGS = 10V, See Fig. 6 and 13
VDD = 250V
ID = 5.0A
RG = 14â¦
RD = 49â¦,See Fig. 10
VGS = 0V
VDS = 25V
Æ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 400V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 400V
Parameter
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Thermal Resistance
Typ.
âââ
âââ
âââ
Max.
230
5.0
7.4
Units
mJ
A
mJ
Parameter
Typ.
Max.
Units
RθJC
RθCS
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
âââ
1.7
0.50
âââ
°C/W
RθJA
Junction-to-Ambient
âââ
62
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
MOSFET symbol
D
âââ âââ 5.0
A showing the
integral reverse
G
âââ âââ 20
p-n junction diode.
S
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
âââ âââ 1.5
âââ 430 650
V TJ = 25°C, IS = 5.0A, VGS = 0V
ns TJ = 25°C, IF = 5.0A
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
âââ 1.62 2.4 µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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