IRF830APBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

PD- 94820
SMPS MOSFET _IRF830APbF
Applications
Switch Mode Power Supply ( SMPS )
Uninterruptable Power Supply
High speed power switching
Lead-Free
Benefits
Low Gate Charge Qg results in Simple
Drive Requirement
Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
Avalanche Voltage and Current
Effective Coss specified ( See AN 1001)
HEXFET^® Power MOSFET
V_DSS
500V
Rds(on) max I_D
1.40Ω
5.0A
TO-220AB ^{G D S}
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
5.0
3.2
20
74
0.59
± 30
5.3
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies:
Two transistor Forward
Half Bridge and Full Bridge
Notes through are on page 8
www.irf.com
1
11/5/03