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| IRF8010 Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRF8010
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage 100 âââ âââ V VGS = 0V, ID = 250µA
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient âââ 0.11 âââ V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance âââ 12 15 m⦠VGS = 10V, ID = 45A
VGS(th)
Gate Threshold Voltage
2.0 âââ 4.0 V VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
âââ âââ 20 µA VDS = 100V, VGS = 0V
âââ âââ 250
VDS = 100V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -200
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
82
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
81
22
26
15
130
61
120
3830
480
59
3830
280
530
Max. Units
Conditions
âââ V VDS = 25V, ID = 45A
120
ID = 80A
âââ nC VDS = 80V
âââ
VGS = 10V
âââ
VDD = 50V
âââ
ID = 80A
âââ ns RG = 39â¦
âââ
VGS = 10V
âââ
VGS = 0V
âââ
VDS = 25V
âââ pF Æ = 1.0MHz
âââ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
âââ
VGS = 0V, VDS = 80V, Æ = 1.0MHz
âââ
VGS = 0V, VDS = 0V to 80V
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Typ.
âââ
âââ
âââ
Max.
310
45
26
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
âââ âââ 80
MOSFET symbol
D
A showing the
âââ âââ 320
integral reverse
G
âââ âââ 1.3
âââ 99 150
âââ 460 700
p-n junction diode.
S
V TJ = 25°C, IS = 80A, VGS = 0V
ns TJ = 150°C, IF = 80A, VDD = 50V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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