IRF8010 Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

PD - 94497
SMPS MOSFET
IRF8010
Applications
High frequency DC-DC converters
UPS and Motor Control
Benefits
Low Gate-to-Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective C_OSS to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
Typical R_DS(on) = 12mΩ
HEXFET^® Power MOSFET
V_DSS R_DS(on) max
I_D
100V
15mΩ
80A
TO-220AB
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
dv/dt
T_J
T_STG
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
Junction-to-Case
R_θCS
Case-to-Sink, Flat, Greased Surface
R_θJA
Junction-to-Ambient
Max.
80
57
320
260
1.8
± 20
16
-55 to + 175
300 (1.6mm from case )
1.1(10)
Units
A
W
W/°C
V
V/ns
°C
N•m (lbf•in)
Typ.
–––
0.50
–––
Max.
0.57
–––
62
Units
°C/W
Notes through
www.irf.com
are on page 8
1
08/23/02