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IRF7811AVPBF Datasheet, PDF (2/6 Pages) International Rectifier – N-Channel Application-Specific MOSFETs | |||
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IRF7811AVPbF
Electrical Characteristics
Parameter
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
Total Gate Charge, Control FET
Total Gate Charge, Synch FET
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol Min
V(BR)DSS 30
RDS(on) âââ
VGS(th) 1.0
âââ
IDSS âââ
âââ
IGSS âââ
Qg âââ
Qg âââ
Qgs1 âââ
Qgs2 âââ
Qgd âââ
QSW âââ
QOSS âââ
RG 0.5
td(on) âââ
tr
âââ
td(off) âââ
tf
âââ
Ciss âââ
Coss âââ
Crss âââ
Typ Max Units
Conditions
âââ âââ V VGS = 0V, ID = 250µA
d 11 14 m⦠VGS = 4.5V, ID = 15A
âââ 3.0 V VDS = VGS, ID = 250µA
âââ 50 µA VDS = 30V, VGS = 0V
âââ 20 µA VDS = 24V, VGS = 0V
âââ 100 mA VDS = 24V, VGS = 0V, TJ = 100°C
âââ ±100 nA VGS = ± 20V
17 26 nC VDS = 24V, ID = 15A, VGS = 5.0V
14 21
VGS = 5.0V, VDS < 100mV
3.4 âââ
1.6 âââ
5.1 âââ
VDS = 16V, ID = 15A
6.7 âââ
8.1 12
âââ 4.4
VDS = 16V, VGS = 0
â¦
8.6 âââ
21 âââ
43 âââ
10 âââ
ns VDD = 16V
ID = 15A
VGS = 5.0V
Clamped Inductive Load
1801 âââ
723 âââ
46 âââ
pF VGS = 0V
VDS = 10V
Diode Characteristics
Parameter
Diode Forward Voltage
f Reverse Recovery Charge
Reverse Recovery Charge
f (with Parallel Schottsky)
Symbol Min
VSD âââ
Qrr âââ
Qrr âââ
Typ Max Units
Conditions
d âââ 1.3 V TJ = 25°C, IS = 15A ,VGS = 0V
50 âââ nC di/dt = 700A/µs
VDD = 16V, VGS = 0V, ID = 15A
43 âââ nC di/dt = 700A/µs , (with 10BQ040)
VDD = 16V, VGS = 0V, ID = 15A
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
 Pulse width ⤠400 µs; duty cycle ⤠2%.
 When mounted on 1 inch square copper board, t < 10 sec.
 Typ = measured - Qoss
Â
Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS measured at VGS =5.0V, IF = 15A.
 Rθ is measured at TJ approximately 90°C
2
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