IRF7811AVPBF Datasheet, PDF (1/6 Pages) International Rectifier – N-Channel Application-Specific MOSFETs

IRF7811A^PV^D-P⁹⁵b²⁶F⁵
IRF7811AVPbF
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current
applications
• 100% R_G Tested
• Lead-Free
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7811AV has been optimized for all parameters
that are critical in synchronous buck converters including
R_DS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7811AV offers an extremely low combination of
Q_sw & R_DS(on) for reduced losses in both control and
synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical
PCB mount application.
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Output Current
(V_GS ≥ 4.5V)
™ Pulsed Drain Current
T_A = 25°C
T_L = 90°C
Power Dissipation eÃÃÃÃÃÃÃÃÃÃTA = 25°C
T_L = 90°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
™ Pulsed Source Current
SO-8
S
1
S
2
S
3
G
4
AA
8
D
7
D
6
D
5
D
Top View
DEVICE CHARACTERISTICS…
R_DS(on)
Q_G
Q_SW
Q_OSS
IRF7811AV
11 mΩ
17 nC
6.7 nC
8.1 nC
Symbol
V_DS
V_GS
I_D
I_DM
P_D
T_J , T_STG
I_S
I_SM
IRF7811AV
30
±20
10.8
11.8
100
2.5
3.0
-55 to 150
2.5
50
Units
V
A
W
°C
A
Thermal Resistance
Parameter
eh Maximum Junction-to-Ambient
hà Maximum Junction-to-Lead
www.irf.com
Symbol
R_θJA
R_θJL
Typ
–––
–––
Max
50
20
Units
°C/W
1
08/17/04