IRF7807VD2TRPBF Datasheet, PDF (2/9 Pages) International Rectifier – Co-Pack N-channel HEXFET® Power MOSFET and Schottky Diode

IRF7807VD2PbF
Electrical Characteristics
Parameter
Drain-to-Source
Breakdown Voltage
BV_DSS
Static Drain-Source
on Resistance
Gate Threshold Voltage
Drain-Source Leakage
C^Cuu^rr^rr^eeⁿn^t t*
R_DS(on)
V_GS(th)
I_DSS
Min Typ
30 –
17
1.0
Max Units
–
V
25 mΩ
V
50 µA
6.0 mA
Gate-Source Leakage
Current*
Total Gate Charge*
Pre-Vth
Gate-Source Charge
Post-Vth
Gate-Source Charge
Gate to Drain Charge
Switch Chg(Q_gs2 + Q_gd)
Output Charge*
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
I_GSS
Q_G
Q_GS1
Q_GS2
Q_GD
Q_sw
Q_oss
R_G
t_{d (on)}
t_r
t_{d (off)}
t_f
±100 nA
9.5 14
2.3
1.0
nC
2.4
3.4 5.2
12 16.8
2.0
Ω
6.3
1.2
ns
11
2.2
Conditions
V_GS = 0V, I_D = 250µA
V_GS = 4.5V, I_D = 7.0A‚
V_DS = V_GS,I_D = 250µA
V_DS = 24V, V_GS = 0
V_DS = 24V, V_GS = 0,
Tj = 100°C
V_GS = ±20V
V_GS=4.5V, I_D=7.0A
V_DS = 16V
V_DS = 16V, V_GS = 0
V_DD = 16V, I_D = 7.0A
V_GS = 5V, R_G= 2Ω
Resistive Load
Schottky Diode & Body Diode Ratings and Characteristics
Parameter
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
Conditions
V_SD
0.54
V T_j = 25°C, I_s = 3.0A, V_GS =0V‚
0.43
T_j = 125°C, I_s = 3.0A, V_GS =0V‚
trr
36
ns T = 25°C, I = 7.0A, V = 16V
j
s
DS
Qrr
41
nC di/dt = 100A/µs
t_on
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes: _
‚
ƒ
„
…
*
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
50% Duty Cycle, Rectangular
Typical
values
of
R_DS(on)
measured
at
V
GS
=
4.5V,
Q,
G
Q
SW
and
Q
OSS
measured at V_GS = 5.0V, I_F = 7.0A.
Device are 100% tested to these parameters.
2
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