IRF7807VD2TRPBF Datasheet, PDF (1/9 Pages) International Rectifier – Co-Pack N-channel HEXFET® Power MOSFET and Schottky Diode

PD-95291
IRF7807VD2PbF
FETKY™ MOSFET / SCHOTTKY DIODE
• Co-Pack N-channel HEXFET^® Power MOSFET
and Schottky Diode
• Ideal for Synchronous Rectifiers in DC-DC
A/S
1
8
K/D
Converters Up to 5A Output
• Low Conduction Losses
• Low Switching Losses
A/S
2
A/S
3
7
K/D
6
K/D
• Low Vf Schottky Rectifier
• Lead-Free
G
4
5
K/D
D
Description
SO-8
Top View
The FETKY^™ family of Co-Pack HEXFET^®MOSFETs and
Schottky diodes offers the designer an innovative, board
space saving solution for switching regulator and power
management applications. HEXFET power MOSFETs
utilize advanced processing techniques to achieve
DEVICE CHARACTERISTICS…
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier’s low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The SO-
R_DS(on)
Q
G
Q_sw
Q_oss
IRF7807VD2
17mΩ
9.5nC
3.4nC
12nC
8 package is designed for vapor phase, infrared or wave
soldering techniques.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
25°C
Current (V_GS ≥ 4.5V)
Pulsed Drain Current
70°C
Power Dissipationƒ
25°C
70°C
Schottky and Body Diode
25°C
Average ForwardCurrent„
70°C
Junction & Storage Temperature Range
Symbol
V
DS
V_GS
I_D
I_DM
P_D
I_F (AV)
T_J, T_STG
Max.
30
±20
8.3
6.6
66
2.5
1.6
3.7
2.3
–55 to 150
Units
V
A
W
A
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambientƒ
R_θJA
Maximum Junction-to-Lead
R_θJL
www.irf.com
Max.
50
20
Units
°C/W
°C/W
1
10/08/04