IRF7807V Datasheet, PDF (2/8 Pages) International Rectifier – N Channel Application Specific MOSFET

IRF7807V
Electrical Characteristics
Parameter
Drain-to-Source
Breakdown Voltage
BV_DSS
Static Drain-Source
on Resistance
Gate Threshold Voltage
Drain-Source Leakage
C^Cuu^rr^rr^eeⁿn^t t*
R_DS(on)
V_GS(th)
I_DSS
Min Typ
30 –
17
1.0
Max Units
–
V
25 mΩ
V
20
100 µA
Gate-Source Leakage
Current*
Total Gate Charge*
Pre-Vth
Gate-Source Charge
Post-Vth
Gate-Source Charge
Gate to Drain Charge
Switch Chg(Q_gs2 + Q_gd)
Output Charge*
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
I_GSS
Q_G
Q_GS1
Q_GS2
Q_GD
Q_sw
Q_oss
R_G
t_{d (on)}
t_r
t_{d (off)}
t_f
±100 nA
9.5 14
2.3
1.0
nC
2.4
3.4 5.2
12 16.8
2.0
Ω
6.3
1.2
ns
11
2.2
Conditions
V_GS = 0V, I_D = 250µA
V_GS = 4.5V, I_D = 7.0A‚
V_DS = V_GS,I_D = 250µA
V_DS = 24V, V_GS = 0
V_DS = 24V, V_GS = 0,
Tj = 100°C
V_GS = ±20V
V_GS=5V, I_D=7.0A
V_DS = 16V
V_DS = 16V, V_GS = 0
V_DD = 16V, I_D = 7.0A
V_GS = 5V, R_G= 2Ω
Resistive Load
Source-Drain Rating & Characteristics
Parameter
Min Typ Max Units
Diode Forward
V_SD
Voltage*
1.2 V
Reverse Recovery
Q_rr
Charge„
64
nC
Reverse Recovery
Q_rr(s)
41
nC
Charge (with Parallel
Schottky)„
Conditions
I_S = 7.0A‚, V_GS = 0V
di/dt ~ 700A/µs
V_DS = 16V, V_GS = 0V, I_S = 7.0A
di/dt = 700A/µs
(with 10BQ040)
V_DS = 16V, V_GS = 0V, I_S = 7.0A
Notes: _
‚
ƒ
„
…
*
2
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
Typ = measured - Q
oss
Typical values of R_DS(on) measured at V_GS = 4.5V, Q_G, Q_SW and Q_OSS
measured at V_GS = 5.0V, I_F = 7.0A.
Device are 100% tested to these parameters.
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