IRF7807V Datasheet, PDF (1/8 Pages) International Rectifier – N Channel Application Specific MOSFET

• N Channel Application Specific MOSFET
• Ideal for Mobile DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The
reduction of conduction and switching losses makes
it ideal for high efficiency DC-DC Converters that
power the latest generation of mobile microprocessors.
A pair of IRF7807V devices provides the best cost/
performance solution for system voltages, such as
3.3V and 5V.
PD-94108
IRF7807V
SO-8
S
1
S
2
S
3
G
4
A
8
D
7
D
6
D
5
D
Top View
DEVICE CHARACTERISTICS…
R_DS(on)
Q
G
Q_sw
Q_oss
IRF7807V
17mΩ
9.5nC
3.4nC
12nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V_GS ≥ 4.5V)
Pulsed Drain Current
T = 25°C
A
T_A = 70°C
Power Dissipationƒ
T = 25°C
A
T_A = 70°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Thermal Resistance
Parameter
Maximum Junction-to-Ambientƒ
Maximum Junction-to-Lead
Symbol
V_DS
V_GS
I
D
I_DM
P
D
T_J, T_STG
I
S
I_SM
R_θJA
R_θJL
IRF7807 V
30
±20
8.3
6.6
66
2.5
1.6
–55 to 150
2.5
66
Max.
50
20
Units
V
A
W
°C
A
Units
°C/W
°C/W
3/1/01