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| IRF7807D2PBF Datasheet, PDF (2/8 Pages) International Rectifier – FETKY™ MOSFET / SCHOTTKY DIODE | |||
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IRF7807D2PbF
Electrical Characteristics
Parameter
Drain-to-Source
Breakdown Voltage*
V(BR)DSS
Static Drain-Source
on Resistance*
RDS(on)
Gate Threshold Voltage* VGS(th)
Drain-Source Leakage IDSS
Current*
Gate-Source Leakage
Current*
Total Gate Charge
Synch FET*
Total Gate Charge
Control FET*
Pre-Vth
Gate-Source Charge
Post-Vth
Gate-Source Charge
Gate to Drain Charge
Switch Charge*
(Qgs2 + Qgd)
Output Charge*
Gate Resistance
IGSS
Qgsync
Qgcont
Qgs1
Qgs2
Qgd
QSW
Qoss
Rg
Min Typ Max Units
Conditions
30
V VGS = 0V, ID = 250µA
17
25 m⦠VGS = 4.5V, ID = 7AÂ
1.0
V VDS = VGS,ID = 250µA
90
µA VDS = 24V, VGS = 0V
7.2 mA VDS = 24V, VGS = 0V,
Tj = 125°C
+/- 100 nA VGS = +/-12V
10.5 14
12
17
2.1
VDS<100mV,
VGS = 5V, ID = 7A
VDS= 16V,
VGS = 5V, ID = 7A
VDS = 16V, ID = 7A
0.76
nC
2.9
3.66 5.2
17.6 21.6
VDS = 16V, VGS = 0
1.2
â¦
Schottky Diode & Body Diode Ratings and Characteristics
Parameter
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
Conditions
VSD
0.54
V Tj = 25°C, Is = 3A, VGS =0VÂ
0.43
Tj = 125°C, Is = 3A, VGS =0VÂ
trr
36
ns Tj = 25°C, Is = 7.0A, VDS = 16V
Qrr
41
nC di/dt = 100A/µs
t
on
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
 Repetitive rating; pulse width limited by max. junction temperature.
 Pulse width ⤠300 µs; duty cycle ⤠2%.
 When mounted on 1 inch square copper board, t < 10 sec.
 50% Duty Cycle, Rectangular
* Devices are 100% tested to these parameters.
2
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