IRF7807D2PBF Datasheet, PDF (1/8 Pages) International Rectifier – FETKY™ MOSFET / SCHOTTKY DIODE

PD- 95436A
IRF7807D2PbF
• Co-Pack N-channel HEXFET^® Power MOSFET
and Schottky Diode
• Ideal for Synchronous Rectifiers in DC-DC
Converters up to 5A Output
• Low Conduction Losses
• Low Switching Losses
• Low Vf Schottky Rectifier
• Lead-Free
FETKY™ MOSFET / SCHOTTKY DIODE
SO-8
A/S
1
8
K/D
A/S
2
7
K/D
A/S
3
6
K/D
G
4
5
K/D
D
Top View
Description
The FETKY^™ family of Co-Pack HEXFET^® MOSFETs
and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and
power management applications. HEXFET power
MOSFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
Combining this technology with International Rectifier’s
low forward drop Schottky rectifiers results in an extremely
efficient device suitable for use in a wide variety of
portable electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The SO-
8 package is designed for vapor phase, infrared or wave
soldering techniques.
Device Features (Max Values)
V_DS
R_DS(on)
Q_g
Q_SW
Q_oss
IRF7807D2
30V
25mΩ
14nC
5.2nC
21.6nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
25°C
Current (V_GS ≥ 4.5V)
Pulsed Drain Current
70°C
Power Dissipation
25°C
70°C
Schottky and Body Diode
25°C
Average ForwardCurrent„
70°C
Junction & Storage Temperature Range
Symbol
V
DS
V_GS
I_D
I_DM
P_D
I_F (AV)
T_J, T_STG
Max.
30
±12
8.3
6.6
66
2.5
1.6
3.7
2.3
–55 to 150
Units
V
A
W
A
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambientƒ
R_θJA
www.irf.com
Max.
50
Units
°C/W
1
10/7/04