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IRF7756 Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRF7756
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-12 âââ âââ
âââ -0.006 âââ
âââ âââ 0.040
ÂÂÂ âââ 0.058
ÂÂÂ âââ 0.087
-0.4 âââ -0.9
13 âââ âââ
âââ âââ -1.0
âââ âââ -25
âââ âââ -100
âââ âââ 100
âââ 12 18
âââ 1.8 2.7
âââ 2.9 4.4
âââ 12 âââ
âââ 18 âââ
âââ 160 âââ
âââ 170 âââ
âââ 1400 âââ
âââ 310 âââ
âââ 240 âââ
V
V/°C
â¦
V
S
µA
nA
nC
ns
pF
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -4.5V, ID = -4.3A Â
VGS = -2.5V, ID = -3.4A Â
VGS = -1.8V, ID = -2.2A Â
VDS = VGS, ID = -250µA
VDS = -10V, ID = -4.3A
VDS = -9.6V, VGS = 0V
VDS = -9.6V, VGS = 0V, TJ = 70°C
VGS = -8.0V
VGS = 8.0V
ID = -4.3A
VDS = -6.0V
VGS = -4.5V
VDD = -6.0V,
ID = -1.0A
RG = 6.0â¦
VGS = -4.5V Â
VGS = 0V
VDS = -10V
Æ = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min.
ÂÂÂ
ÂÂÂ
âââ
âââ
âââ
Typ. Max.
ÂÂÂ -1.0
ÂÂÂ -17
âââ -1.2
35 53
20 30
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -1.0A, VGS = 0V Â
TJ = 25°C, IF = -1.0A
di/dt = -100A/µs Â
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
 Pulse width ⤠400µs; duty cycle ⤠2%.
 Surface mounted on FR-4 board, t ⤠10sec.
2
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