IRF7756 Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET

l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel
PD -94159A
V_DSS
-12V
IRF7756
HEXFET^® Power MOSFET
R_DS(on) max
0.040@V_GS = -4.5V
0.058@V_GS = -2.5V
0.087@V_GS = -1.8V
I_D
±4.3A
±3.4A
±2.2A
Description
HEXFET^® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for, provides thedesigner
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.1mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
1
2
3
4
1 = D1
2 = S1
3 = S1
4 = G1
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
T_J , T_STG
Parameter
Drain-Source Voltage
Continuous Drain Current, V_GS @ -4.5V
Continuous Drain Current, V_GS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
8
7
6
5
8 = D2
7 = S2
6 = S2
5 = G2
TSSOP-8
Max.
-12
-4.3
-3.5
-17
1.0
0.64
8.0
±8.0
-55 to +150
Units
V
A
W
W
mW/°C
V
°C
Thermal Resistance
Parameter
R_θJA
Maximum Junction-to-Ambientƒ
www.irf.com
Max.
125
Units
°C/W
1
3/17/04