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| IRF7750TRPBF Datasheet, PDF (2/8 Pages) International Rectifier – Ultra Low On-Resistance | |||
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IRF7750PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
-20 âââ âââ V VGS = 0V, ID = -250µA
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
âââ 0.012 âââ V/°C
âââ âââ 0.030
 âââ 0.055 â¦
Reference to 25°C, ID = -1mA
VGS = -4.5V, ID = -4.7A Â
VGS = -2.5V, ID = -3.8A Â
VGS(th)
Gate Threshold Voltage
-0.45 âââ -1.2 V VDS = VGS, ID = -250µA
gfs
Forward Transconductance
11 âââ âââ S VDS = -10V, ID = -4.7A
IDSS
Drain-to-Source Leakage Current
âââ âââ -1.0
âââ âââ -25
µA
VDS = -20V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 70°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
âââ âââ -100 nA VGS = -12V
âââ âââ 100
VGS = 12V
Qg
Total Gate Charge
âââ 26 39
ID = -4.7A
Qgs
Gate-to-Source Charge
âââ 3.9 5.8 nC VDS = -16V
Qgd
Gate-to-Drain ("Miller") Charge
âââ 8.0 12
VGS = -5.0VÂ
td(on)
Turn-On Delay Time
âââ 15 âââ
VDD = -10V
tr
td(off)
Rise Time
Turn-Off Delay Time
âââ 54 âââ ns ID = -1.0A
âââ 180 âââ
RD = 10â¦
tf
Fall Time
âââ 210 âââ
RG = 24⦠Â
Ciss
Input Capacitance
âââ 1700 âââ
VGS = 0V
Coss
Output Capacitance
âââ 380 âââ pF VDS = -15V
Crss
Reverse Transfer Capacitance
âââ 270 âââ
Æ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min.
ÂÂÂ
ÂÂÂ
âââ
âââ
âââ
Typ. Max.
ÂÂÂ -1.0
ÂÂÂ -38
âââ -1.2
26 39
16 24
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -1.0A, VGS = 0V Â
TJ = 25°C, IF = -1.0A
di/dt = 100A/µs Â
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
 Pulse width ⤠300µs; duty cycle ⤠2%.
 When mounted on 1 inch square copper board, t<10 sec
2
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