IRF7750TRPBF Datasheet, PDF (1/8 Pages) International Rectifier – Ultra Low On-Resistance

l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Very Small SOIC Package
l Low Profile ( < 1.1mm)
l Available in Tape & Reel
l Lead-Free
PD-96019A
IRF7750PbF
HEXFET^® Power MOSFET
V_DSS = -20V
R_DS(on) = 0.030Ω
Description
HEXFET^® power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Interna-
tional Rectifier is well known for, provides the designer
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.1mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
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Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
T_J, T_STG
Parameter
Drain- Source Voltage
Continuous Drain Current, V_GS @ -4.5V
Continuous Drain Current, V_GS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
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TSSOP-8
Max.
-20
±4.7
±3.8
±38
1.0
0.64
0.008
± 12
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
R_θJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
125
Units
°C/W
1
05/14/09