IRF7739L2PBF Datasheet, PDF (2/11 Pages) International Rectifier – DirectFET

Power MOSFET

IRF7739L2PbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min.
BV_DSS
∆ΒV_DSS/∆T_J
R_DS(on)
V_GS(th)
∆V_GS(th)/∆T_J
I_DSS
Drain-to-Source Breakdown Voltage
40
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
Gate Threshold Voltage
2.0
Gate Threshold Voltage Coefficient
–––
Drain-to-Source Leakage Current
–––
–––
I_GSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs
Forward Transconductance
280
Q_g
Q_gs1
Q_gs2
Q_gd
Q_godr
Q_sw
Q_oss
R_G
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss
C_oss
Total Gate Charge
–––
Pre-Vth Gate-to-Source Charge
–––
Post-Vth Gate-to-Source Charge
–––
Gate-to-Drain Charge
–––
Gate Charge Overdrive
–––
Switch Charge (Q_gs2 + Q_gd)
–––
Output Charge
–––
Gate Resistance
–––
Turn-On Delay Time
–––
Rise Time
–––
Turn-Off Delay Time
–––
Fall Time
–––
Input Capacitance
–––
Output Capacitance
–––
Reverse Transfer Capacitance
–––
Output Capacitance
–––
Output Capacitance
–––
Typ.
–––
0.008
0.70
2.8
-6.7
–––
–––
–––
–––
–––
220
46
19
81
74
100
83
1.5
21
71
56
42
11880
2510
1240
8610
2230
Max.
–––
–––
1.0
4.0
–––
20
250
100
-100
–––
330
–––
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V VGS = 0V, ID = 250µA
i ^{V/°C Reference to 25°C, ID = 1.0mA}
mΩ ^VGS ^{= 10V, I}D ^{= 160A}
V ^VDS ^{= V}GS^{, I}D ^{= 250µA}
mV/°C
µA VDS = 40V, VGS = 0V
V_DS = 32V, V_GS = 0V, T_J = 125°C
nA VGS = 20V
V_GS = -20V
S VDS = 10V, ID = 160A
V_DS = 20V
nC VGS = 10V
I_D = 160A
See Fig. 9
nC VDS = 16V, VGS = 0V
Ãi Ω
V_DD = 20V, V_GS = 10V
I_D = 160A
ns R_G=1.8Ω
V_GS = 0V
pF VDS = 25V
ƒ = 1.0MHz
V_GS = 0V, V_DS = 1.0V, f=1.0MHz
V_GS = 0V, V_DS = 32V, f=1.0MHz
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I_S
Continuous Source Current
––– ––– 110
MOSFET symbol
(Body Diode)
A showing the
I_SM
Pulsed Source Current
Ãg (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
––– ––– 1070
integral reverse
––– ––– 1.3
i ^{p-n junction diode.}
V TJ = 25°C, IS = 160A, VGS = 0V
––– 87
––– 250
130
380
i ^{ns TJ = 25°C, IF = 160A, VDD = 20V}
nC di/dt = 100A/µs
Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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February 13, 2014