IRF7739L2PBF Datasheet, PDF (1/11 Pages) International Rectifier – DirectFET

Power MOSFET

l RoHS Compliant, Halogen Free 
l Lead-Free (Qualified up to 260°C Reflow)
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
l Industrial Qualified
IRF7739L2PbF
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
V_DSS
40V min
Q_{g tot}
V_GS
R_DS(on)
±20V max 0.70mΩ@ 10V
Q_gd
V_gs(th)
220nC 81nC
2.8V
Applicable DirectFET Outline and Substrate Outline 
L8
DirectFET™ ISOMETRIC
SB
SC
M2
M4
L4
L6
L8
The IRF7739L2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve
the lowest on-state resistance in a package that has a footprint smaller than a D²PAK and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems.
The IRF7739L2TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in
the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system
reliability improvements, and makes this device ideal for high performance power converters.
Part number
Package Type
IRF7739L2TRPbF DirectFET2 Large Can
IRF7739L2TR1PbF DirectFET2 Large Can
Standard Pack
Form
Q uan tity
Tape and Reel
4000
Tape and Reel
1000
Note
"TR" suffix
"TR1" suffix EOL notice #264
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_A = 25°C
I_D @ T_C = 25°C
I_DM
E_AS
I_AR
10
Gate-to-Source Voltage
f Continuous Drain Current, V_GS @ 10V (Silicon Limited)
f Continuous Drain Current, V_GS @ 10V (Silicon Limited)
e Continuous Drain Current, V_GS @ 10V (Silicon Limited)
f Continuous Drain Current, V_GS @ 10V (Package Limited)
g Pulsed Drain Current
h Single Pulse Avalanche Energy
Ãg Avalanche Current
0.93
ID = 160A
0.92
8
0.91
6
TJ = 25°C
0.90
0.89
4
0.88
VGS = 10V
Max.
40
±20
270
190
46
375
1070
270
160
Units
V
A
mJ
A
2
TJ = 125°C
0.87
0.86
0
5.0 5.5 6.0 6.5 7.0 7.5 8.0
0.85
0
40
80
120
160
200
VGS, Gate -to -Source Voltage (V)
Notes:
Fig 1. Typical On-Resistance vs. Gate Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
ID , Drain Current (A)
Fig 2. Typical On-Resistance vs. Drain Current
„ T_C measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting T_J = 25°C, L = 0.021mH, R_G = 25Ω, I_AS = 160A.
1
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February 13, 2014