IRF7524D1PBF_15 Datasheet, PDF (2/8 Pages) International Rectifier – Generation 5 Technology

IRF7524D1PbF
MOSFET Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS Drain-to-Source Breakdown Voltage
-20 ––– ––– V V_GS = 0V, I_D = -250µA
R_DS(on)
Static Drain-to-Source On-Resistance
––– 0.17 0.27 _Ω V_GS = -4.5V, I_D = -1.2A ƒ
––– 0.28 0.40
V_GS = -2.7V, I_D = -0.60A ƒ
V_GS(th)
Gate Threshold Voltage
-0.70 ––– ––– V V_DS = V_GS, I_D = -250µA
g_fs
Forward Transconductance
1.3 ––– ––– S V_DS = -10V, I_D = -0.60A
I_DSS
Drain-to-Source Leakage Current
––– ––– -1.0 _µA V_DS = -16V, V_GS = 0V
––– ––– -25
V_DS = -16V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– -100 _nA V_GS = -12V
Gate-to-Source Reverse Leakage
––– ––– 100
V_GS = 12V
Q_g
Total Gate Charge
Q_gs
Gate-to-Source Charge
––– 5.4 8.2
––– 0.96 1.4
I_D = -1.2A
nC V_DS = -16V
Q_gd
Gate-to-Drain ("Miller") Charge
––– 2.4 3.6
V_GS = -4.5V, See Fig. 6 ƒ
t_d(on)
Turn-On Delay Time
––– 9.1 –––
V_DD = -10V
t_r
t_d(off)
t_f
Rise Time
Turn-Off Delay Time
Fall Time
––– 35 ––– _ns I_D = -1.2A
––– 38 –––
R_G = 6.0Ω
––– 43 –––
R_D = 8.3Ω, ƒ
C_iss
Input Capacitance
––– 240 –––
V_GS = 0V
C_oss
Output Capacitance
––– 130 ––– pF V_DS = -15V
C_rss
Reverse Transfer Capacitance
––– 64 –––
ƒ = 1.0MHz, See Fig. 5
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I_S
ISM
Continuous Source Current(Body Diode) ––– ––– -1.25
Pulsed Source Current (Body Diode) ––– ––– -9.6 ^A
V_SD
Body Diode Forward Voltage
––– ––– -1.2 V T_J = 25°C, I_S = -1.2A, V_GS = 0V
t_rr
Reverse Recovery Time (Body Diode) ––– 52 78 ns T_J = 25°C, I_F = -1.2A
Q_rr
Reverse Recovery Charge
––– 63 95 nC di/dt = 100A/µs ƒ
Schottky Diode Maximum Ratings
Parameter
Max. Units
I_F(av)
Max. Average Forward Current
1.9 _A
1.4
ISM
Max. peak one cycle Non-repetitive
120
Surge current
11 _A
Schottky Diode Electrical Specifications
Conditions
50% Duty Cycle. Rectangular Wave, T_A = 25°C
See Fig.14
T_A = 70°C
5µs sine or 3µs Rect. pulse Following any rated
10ms sine or 6ms Rect. pulse load condition &
with V_RRM applied
Parameter
V_FM
Max. Forward voltage drop
IRM
Max. Reverse Leakage current
Ct
dv/dt
Max. Junction Capacitance
Max. Voltage Rate of Charge
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2
Max. Units
0.50
0.62
0.39 ^V
0.57
0.02 _mA
8
92 pF
3600 V/ µs
Conditions
I_F = 1.0A, T_J = 25°C
I_F = 2.0A, T_J = 25°C
I_F = 1.0A, T_J = 125°C
I_F = 2.0A, T_J = 125°C .
VR = 20V TJ = 25°C
TJ = 125°C
VR = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated VR
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