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| IRF7493PBF_15 Datasheet, PDF (2/9 Pages) International Rectifier – High frequency DC-DC converters | |||
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IRF7493PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
80 âââ âââ V VGS = 0V, ID = 250µA
âÎVDSS/âTJ
RDS(on)
Breakdown Voltage Temp. Coefficient âââ 0.074 âââ mV/°C Reference to 25°C, ID = 1mA
e Static Drain-to-Source On-Resistance âââ 11.5 15 m⦠VGS = 10V, ID = 5.6A
VGS(th)
Gate Threshold Voltage
2.0 âââ 4.0 V VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
âââ âââ 20 µA VDS = 80V, VGS = 0V
âââ âââ 250
VDS = 64V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -200
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Forward Transconductance
13 âââ âââ
Qg
Total Gate Charge
âââ 35 53
Qgs
Gate-to-Source Charge
âââ 5.7 âââ
Qgd
Gate-to-Drain Charge
âââ 12 âââ
td(on)
Turn-On Delay Time
âââ 8.3 âââ
tr
Rise Time
âââ 7.5 âââ
td(off)
Turn-Off Delay Time
âââ 30 âââ
tf
Fall Time
âââ 12 âââ
Ciss
Input Capacitance
âââ 1510 âââ
Coss
Output Capacitance
âââ 320 âââ
Crss
Reverse Transfer Capacitance
âââ 130 âââ
Coss
Output Capacitance
âââ 1130 âââ
Coss
Output Capacitance
âââ 210 âââ
Crss eff.
Effective Output Capacitance
âââ 320 âââ
S VDS = 15V, ID = 5.6A
ID = 5.6A
VDS = 40V
VGS = 10V
e VDD = 40V,
ID = 5.6A
ns RG = 6.2â¦
VGS = 10V
VGS = 0V
pF VDS = 25V
Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 64V, Æ = 1.0MHz
g VGS = 0V, VDS = 0V to 64V
Avalanche Characteristics
EAS
IAR
d Parameter
Single Pulse Avalanche Energy
ÃÂ Avalanche Current
Typ.
âââ
âââ
Max.
180
5.6
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
âââ âââ 9.3
MOSFET symbol
âââ âââ 74
A showing the
integral reverse
âââ âââ 1.3
p-n junction diode.
e V TJ = 25°C, IS = 5.6A, VGS = 0V
âââ 37
âââ 52
56
78
e ns TJ = 25°C, IF = 5.6A, VDD = 15V
nC di/dt = 100A/µs
2
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