IRF7493PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – High frequency DC-DC converters

PD - 95289
IRF7493PbF
Applications
l High frequency DC-DC converters
l Lead-Free
HEXFET^® Power MOSFET
V_DSS R_DS(on) max Qg (typ.)
: _80V 15m @V_GS=10V _35nC
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
S
1
l Fully Characterized Capacitance Including
Effective C_OSS to Simplify Design, (See
S
2
App. Note AN1001)
S
3
AA
8
D
7
D
6
D
l Fully Characterized Avalanche Voltage
G
4
5
D
and Current
Top View
SO-8
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 70°C
I_DM
P_D @T_C = 25°C
P_D @T_C = 70°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
f Maximum Power Dissipation
f Maximum Power Dissipation
T_J
T_STG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
R_θJC
R_θJA
Junction-to-Lead
f Junction-to-Ambient
Notes  through … are on page 9
Max.
80
± 20
9.3
7.4
74
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
50
Units
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1
09/21/04