IRF7484QPBF Datasheet, PDF (2/10 Pages) International Rectifier – AUTOMOTIVE MOSFET

IRF7484QPbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
V_(BR)DSS
∆V_(BR)DSS/∆T_J
R_DS(on)
V_GS(th)
g_fs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max.
40 ––– –––
––– 0.040 –––
––– ––– 10
1.0 ––– 2.0
40 ––– –––
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
––– 69 100
––– 9.0 –––
––– 16 –––
––– 9.3 –––
––– 5.0 –––
––– 180 –––
––– 58 –––
––– 3520 –––
––– 660 –––
––– 76 –––
Units
V
V/°C
mΩ
V
S
µA
nA
nC
ns
pF
Conditions
V_GS = 0V, I_D = 250µA
Reference to 25°C, I_D = 1mA
V_GS = 7.0V, I_D = 14A ‚
V_DS = V_GS, I_D = 250µA
V_DS = 10V, I_D = 14A
V_DS = 40V, V_GS = 0V
V_DS = 32V, V_GS = 0V, T_J = 125°C
V_GS = 8.0V
V_GS = -8.0V
I_D = 14A
V_DS = 32V
V_GS = 7.0V
V_DD = 20V ‚
I_D = 1.0A
R_G = 6.2Ω
V_GS = 7.0V
V_GS = 0V
V_DS = 25V
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 2.3
A ^{showing the}
––– ––– 110
integral reverse
p-n junction diode.
D
G
S
––– ––– 1.3 V T_J = 25°C, I_S = 2.3A, V_GS = 0V ‚
––– 59 89 ns T_J = 25°C, I_F = 2.3A
––– 110 170 nC di/dt = 100A/µs ‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
ƒ Surface mounted on 1 in square Cu board.
„ Starting T_J = 25°C, L = 2.3mH, R_G = 25Ω,
I_AS = 14A. (See Figure 12).
… I_SD ≤ 14A, di/dt ≤ 140A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C.
† Limited by T_Jmax , see Fig.16c, 16d, 19, 20 for typical repetitive
avalanche performance.
2
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