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| IRF7484QPBF Datasheet, PDF (1/10 Pages) International Rectifier – AUTOMOTIVE MOSFET | |||
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PD - 96167
AUTOMOTIVE MOSFET
Typical Applications
l Relay replacement
l Anti-lock Braking System
l Air Bag
IRF7484QPbF
HEXFET® Power MOSFET
VDSS RDS(on) max (mW) ID
Benefits
l Advanced Process Technology
l Ultra Low On-Resistance
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
l RoHS Compliant (Halogen Free)
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 150°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
40V
10@VGS = 7.0V
S
1
S
2
S
3
G
4
AA
8
D
7
D
6
D
5
D
Top View
14A
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
EAS
IAR
EAR
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current Â
Power DissipationÂ
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyÂ
Avalanche CurrentÂ
Repetitive Avalanche EnergyÂ
Junction and Storage Temperature Range
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient Â
Max.
14
11
110
2.5
0.02
± 8.0
230
See Fig.16c, 16d, 19, 20
-55 to + 150
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
âââ
âââ
Max.
20
50
Units
°C/W
www.irf.com
1
08/01/08
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