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| IRF7478QTRPBF Datasheet, PDF (2/9 Pages) International Rectifier – Advanced Process Technology | |||
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IRF7478QPbF
END OF LIFE
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
60
ÎV(BR)DSS/ÎTJ Breakdown Voltage Temp. Coefficient âââ
RDS(on)
âââ
Static Drain-to-Source On-Resistance âââ
VGS(th)
Gate Threshold Voltage
1.0
IDSS
Drain-to-Source Leakage Current
âââ
âââ
IGSS
Gate-to-Source Forward Leakage
âââ
Gate-to-Source Reverse Leakage
âââ
âââ âââ
0.065 âââ
20 26
23 30
âââ 3.0
âââ 20
âââ 100
âââ 100
âââ -100
V
V/°C
mΩ
V
μA
nA
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 4.2A Â
VGS = 4.5V, ID = 3.5A Â
VDS = VGS, ID = 250μA
VDS = 48V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs
Forward Transconductance
17 âââ âââ
Qg
Total Gate Charge
âââ 21 31
Qgs
Gate-to-Source Charge
âââ 4.3 âââ
Qgd
Gate-to-Drain ("Miller") Charge
âââ 9.6 âââ
td(on)
Turn-On Delay Time
âââ 7.7 âââ
tr
Rise Time
âââ 2.6 âââ
td(off)
Turn-Off Delay Time
âââ 44 âââ
tf
Fall Time
âââ 13 âââ
Ciss
Input Capacitance
âââ 1740 âââ
Coss
Output Capacitance
âââ 300 âââ
Crss
Reverse Transfer Capacitance
âââ 37 âââ
Coss
Output Capacitance
âââ 1590 âââ
Coss
Output Capacitance
âââ 220 âââ
Coss eff. Effective Output Capacitance
âââ 410 âââ
Units
S
nC
ns
pF
Conditions
VDS = 50V, ID = 4.2A
ID = 4.2A
VDS = 48V
VGS = 4.5V
VDD = 30V
ID = 4.2A
RG = 6.2Ω
VGS = 10V Â
VGS = 0V
VDS = 25V
Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 48V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 48V Â
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche EnergyÂ
Avalanche CurrentÂ
Typ.
âââ
âââ
Max.
140
4.2
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
2
Min.
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
âââ
52
100
Max.
2.3
56
1.3
78
150
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 4.2A, VGS = 0V Â
TJ = 25°C, IF = 4.2A
di/dt = 100A/μs Â
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