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| IRF7478QTRPBF Datasheet, PDF (1/9 Pages) International Rectifier – Advanced Process Technology | |||
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END OF LIFE
PD- 96128B
IRF7478QPbF
l Advanced Process Technology
l Ultra Low On-Resistance
l N Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Lead-Free
HEXFET® Power MOSFET
VDSS
60V
RDS(on) max (mW)
26@VGS = 10V
30@VGS = 4.5V
ID
4.2A
3.5A
Description
These HEXFET Power MOSFET's are a 150°C S 1
AA
8
D
junction operating temperature, fast switching
speed and improved repetitive avalanche rating. S 2
7
D
These benefits combine to make this design an
extremely efficient and reliable device for use in a
S
3
6
D
wide variety of applications.
G
4
The efficient SO-8 package provides enhanced
5
D
thermal characteristics making it ideal in a variety
of power applications. This surface mount SO-8
Top View
can dramatically reduce board space and is also
available in Tape & Reel.
SO-8
Package
Base part number Orderable part number Type
Standard Pack
Form
Quantity
IRF7478QPbF
IRF7478QTRPbF
IRF7478QPbF
SO-8
SO-8
Tape and Reel
Tube
4000
95
EOL
Notice
Replacement Part Number
EOL 529 Please search the EOL part number on IRâs website for
EOL 529
guidance
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current Â
Power DissipationÂ
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Â
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
7.0
5.6
56
2.5
0.02
± 20
3.7
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient Â
Notes  through  are on page 8
www.irf.com
Typ.
âââ
âââ
Max.
20
50
Units
°C/W
1
06/27/14
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