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| IRF7413ZPBF_15 Datasheet, PDF (2/10 Pages) International Rectifier – Control FET for Notebook Processor Power | |||
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IRF7413ZPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
âÎVDSS/âTJ
RDS(on)
VGS(th)
âVGS(th)/âTJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
30
âââ
âââ
âââ
1.35
âââ
âââ
0.025
8.0
10.5
1.80
-5.0
âââ
âââ
10
13
2.25
âââ
V VGS = 0V, ID = 250µA
V/°C
mâ¦
Reference to 25°C, ID = 1mA
e VGS = 10V, ID = 13A
e VGS = 4.5V, ID = 10A
V VDS = VGS, ID = 25µA
mV/°C
IDSS
Drain-to-Source Leakage Current
âââ âââ 1.0 µA VDS = 24V, VGS = 0V
âââ âââ 150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = -20V
gfs
Forward Transconductance
62 âââ âââ S VDS = 15V, ID = 10A
Qg
Total Gate Charge
âââ 9.5 14
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
âââ 3.0 âââ
âââ 1.0 âââ
âââ 3.0 âââ
âââ 2.5 âââ
VDS = 15V
nC VGS = 4.5V
ID = 10A
See Fig. 16
Qsw
Switch Charge (Qgs2 + Qgd)
âââ 4.0 âââ
Qoss
Output Charge
âââ 5.6 âââ nC VDS = 15V, VGS = 0V
RG
Gate Resistance
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
âââ 2.3 4.5
âââ 8.7 âââ
âââ 6.3 âââ
âââ 11 âââ
â¦
VDD = 16V, VGS = 4.5V
ID = 10A
ns Clamped Inductive Load
tf
Fall Time
âââ 3.8 âââ
Ciss
Input Capacitance
âââ 1210 âââ
VGS = 0V
Coss
Output Capacitance
âââ 270 âââ pF VDS = 15V
Crss
Reverse Transfer Capacitance
âââ 140 âââ
Æ = 1.0MHz
Avalanche Characteristics
EAS
IAR
d Parameter
Single Pulse Avalanche Energy
 Avalanche Current
Typ.
âââ
âââ
Max.
32
10
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
Min. Typ. Max. Units
Conditions
âââ âââ 3.1
MOSFET symbol
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
âââ âââ 100
âââ âââ 1.0
A showing the
integral reverse
e p-n junction diode.
V TJ = 25°C, IS = 10A, VGS = 0V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
âââ 24
âââ 16
36
24
e ns TJ = 25°C, IF = 10A, VDD = 15V
nC di/dt = 100A/µs
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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