IRF7413ZPBF_15 Datasheet, PDF (1/10 Pages) International Rectifier – Control FET for Notebook Processor Power

PD - 95335D
Applications
l Control FET for Notebook Processor
Power
l Control and Synchronous Rectifier
MOSFET for Graphics Cards and POL
Converters in Computing, Networking
and Telecommunication Systems
Benefits
l Ultra-Low Gate Impedance
l Very Low R_DS(on)
l Fully Characterized Avalanche Voltage
and Current
l 100% Tested for R_G
l Lead-Free
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Power Dissipation
Power Dissipation
T_J
T_STG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
IRF7413ZPbF
V_DSS
30V
HEXFET^® Power MOSFET
R_DS(on) max
I_D
: 10m @V_GS = 10V 13A
S
1
S
2
S
3
G
4
AA
8
D
7
D
6
D
5
D
Top View
SO-8
Max.
30
± 20
13
10
100
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
R_θJL
R_θJA
Junction-to-Drain Lead
f Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes  through „ are on page 10
www.irf.com
1
05/08/08