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IRF7343PBF_15 Datasheet, PDF (2/10 Pages) International Rectifier – DUAL N AND P CHANNEL MOSFET | |||
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IRF7343PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
N-Ch 55 Â Â
P-Ch -55 Â Â
V
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
N-Ch
P-Ch
 0.059 Â
 0.054 Â
V/°C
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
N-Ch
P-Ch
 0.043 0.050
 0.056 0.065
 0.095 0.105
 0.150 0.170
â¦
VGS = 10V, ID = 4.7A Â
VGS = 4.5V, ID = 3.8A Â
VGS = -10V, ID = -3.4A Â
VGS = -4.5V, ID = -2.7A Â
N-Ch 1.0 Â Â
P-Ch -1.0 Â Â
V
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
N-Ch 7.9 Â Â
P-Ch 3.3 Â Â
S
VDS = 10V, ID = 4.5A Â
VDS = -10V, ID = -3.1A
Â
N-Ch   2.0
VDS = 55V, VGS = 0V
P-Ch Â
N-Ch Â
Â
Â
-2.0
25
µA
VDS = -55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 55°C
P-Ch   -25
VDS = -55V, VGS = 0V, TJ = 55°C
N-P   ±100 nA VGS = ±20V
N-Ch Â
P-Ch Â
N-Ch Â
P-Ch Â
N-Ch Â
P-Ch Â
24 36
26 38
2.3 3.4
3.0 4.5
7.0 10
8.4 13
nC
N-Channel
ID = 4.5A, VDS = 44V, VGS = 10V
Â
P-Channel
ID = -3.1A, VDS = -44V, VGS = -10V
N-Ch  8.3 12
P-Ch Â
N-Ch Â
P-Ch Â
N-Ch Â
P-Ch Â
N-Ch Â
P-Ch Â
14 22
3.2 4.8
10 15
32 48
43 64
13 20
22 32
ns
N-Channel
VDD = 28V, ID = 1.0A, RG = 6.0â¦,
RD = 16â¦
Â
P-Channel
VDD = -28V, ID = -1.0A, RG = 6.0â¦,
RD = 16â¦
N-Ch  740 Â
N-Channel
P-Ch  690 Â
VGS = 0V, VDS = 25V, Â = 1.0MHz
N-Ch  190  pF
P-Ch  210 Â
P-Channel
N-Ch  71 Â
VGS = 0V, VDS = -25V, Â = 1.0MHz
P-Ch  86 Â
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
N-Ch   2.0
IS
Continuous Source Current (Body Diode)
P-Ch   -2.0 A
N-Ch   38
ISM
Pulsed Source Current (Body Diode) Â
P-Ch   -27
VSD
Diode Forward Voltage
N-Ch  0.70 1.2
P-Ch  -0.80 -1.2
V
TJ = 25°C, IS = 2.0A, VGS = 0V Â
TJ = 25°C, IS = -2.0A, VGS = 0V Â
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
N-Ch  60 90 ns
P-Ch  54 80
N-Ch  120 170 nC
P-Ch  85 130
N-Channel
TJ = 25°C, IF =2.0A, di/dt = 100A/µs
P-Channel
Â
TJ = 25°C, IF = -2.0A, di/dt = 100A/µs
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 22 )
 Pulse width ⤠300µs; duty cycle ⤠2%.
 N-Channel ISD ⤠4.7A, di/dt ⤠220A/µs, VDD ⤠V(BR)DSS, TJ ⤠150°C Â
Surface mounted on FR-4 board, t ⤠10sec.
P-Channel ISD ⤠-3.4A, di/dt ⤠-150A/µs, VDD ⤠V(BR)DSS, TJ ⤠150°C
 N-Channel Starting TJ = 25°C, L = 6.5mH RG = 25â¦, IAS = 4.7A.
P-Channel Starting TJ = 25°C, L = 20mH RG = 25â¦, IAS = -3.4A.
2
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