IRF7343PBF_15 Datasheet, PDF (1/10 Pages) International Rectifier – DUAL N AND P CHANNEL MOSFET

PD - 92547
IRF7343PbF
HEXFET^® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Fully Avalanche Rated
N-CHANNEL MOSFET
S1
1
8
D1
N-Ch P-Ch
G1
2
S2
3
7
D1
V_DSS 55V -55V
6
D2
l Lead-Free
G2
4
5
D2
Description
P-CHANNEL MOSFET
Top View
R_DS(on) 0.050Ω 0.105Ω
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
E_AS
I_AR
E_AR
V_GS
dv/dt
T_J, T_STG
Parameter
Drain-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation …
Maximum Power Dissipation …
Single Pulse Avalanche Energyƒ
Avalanche Current
Repetitive Avalanche Energy
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
SO-8
Max.
N-Channel
P-Channel
55
-55
4.7
-3.4
3.8
-2.7
38
-27
2.0
1.3
72
114
4.7
-3.4
0.20
± 20
5.0
-5.0
-55 to + 150
Units
V
A
W
W
mJ
A
mJ
V
V/ns
°C
Thermal Resistance
R_θJA
www.irf.com
Parameter
Maximum Junction-to-Ambient …
Typ.
–––
Max.
62.5
Units
°C/W
1
10/7/04