IRF6811STR1PBF Datasheet, PDF (2/9 Pages) International Rectifier – RoHS Compliant and Halogen Free

IRF6811SPbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min.
BV_DSS
∆ΒV_DSS/∆T_J
R_DS(on)
Drain-to-Source Breakdown Voltage
25
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
–––
V_GS(th)
Gate Threshold Voltage
1.1
∆V_GS(th)/∆T_J
Gate Threshold Voltage Coefficient
–––
I_DSS
Drain-to-Source Leakage Current
–––
–––
I_GSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs
Forward Transconductance
180
Q_g
Total Gate Charge
–––
Q_gs1
Pre-Vth Gate-to-Source Charge
–––
Q_gs2
Post-Vth Gate-to-Source Charge
–––
Q_gd
Gate-to-Drain Charge
–––
Q_godr
Gate Charge Overdrive
–––
Q_sw
Switch Charge (Q_gs2 + Q_gd)
–––
Q_oss
Output Charge
–––
R_G
Gate Resistance
–––
t_d(on)
Turn-On Delay Time
–––
t_r
Rise Time
–––
t_d(off)
Turn-Off Delay Time
–––
t_f
Fall Time
–––
C_iss
Input Capacitance
–––
C_oss
Output Capacitance
–––
C_rss
Reverse Transfer Capacitance
–––
Diode Characteristics
Parameter
Min.
I_S
Continuous Source Current
–––
(Body Diode)
I_SM
Pulsed Source Current
Ãg (Body Diode)
–––
V_SD
Diode Forward Voltage
–––
t_rr
Reverse Recovery Time
–––
Q_rr
Reverse Recovery Charge
–––
Typ.
–––
22
2.8
4.1
1.6
-6.2
–––
–––
–––
–––
–––
11
2.2
1.4
4.2
3.2
5.6
11
0.4
8.7
19
11
5.5
1590
460
110
Typ.
–––
–––
–––
18
23
Max. Units
Conditions
–––
–––
3.7
5.4
2.1
–––
1.0
150
100
-100
–––
V VGS = 0V, ID = 250µA
mV/°C ^{Reference to 25°C, I}D ^{= 1mA}
ii _mΩ
V_GS = 10V, I_D = 19A
V_GS = 4.5V, I_D = 15A
V V_DS = V_GS, I_D = 35µA
mV/°C V_DS = V_GS, I_D = 25µA
µA ^VDS ^{= 20V, V}GS ^{= 0V}
V_DS = 20V, V_GS = 0V, T_J = 125°C
nA ^VGS ^{= 16V}
V_GS = -16V
S ^VDS ^{= 13V, I}D ^{= 15A}
17
–––
V_DS = 13V
––– _nC VGS = 4.5V
–––
I_D = 15A
–––
See Fig. 2 & 15
–––
––– nC ^VDS ^{= 16V, V}GS ^{= 0V}
–––
–––
Ãi Ω
V_DD = 13V, V_GS = 4.5V
––– _ns ID = 15A
–––
R_G = 1.5Ω
–––
See Fig. 17
–––
V_GS = 0V
––– pF ^VDS ^{= 13V}
–––
ƒ = 1.0MHz
Max. Units
Conditions
MOSFET symbol
40
showing the
A
integral reverse
150
1.0
i ^{p-n junction diode.}
V TJ = 25°C, IS = 15A, VGS = 0V
27
35
i ^{ns TJ = 25°C, IF = 15A}
nC di/dt = 300A/µs
Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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