IRF6717MTR1PBF Datasheet, PDF (2/9 Pages) International Rectifier – RoHs Compliant and Halgen Free

IRF6717MPbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min.
BV_DSS
∆ΒV_DSS/∆T_J
R_DS(on)
Drain-to-Source Breakdown Voltage
25
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
–––
V_GS(th)
∆V_GS(th)/∆T_J
I_DSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
I_GSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs
Forward Transconductance
140
Q_g
Total Gate Charge
Q_gs1
Pre-Vth Gate-to-Source Charge
Q_gs2
Post-Vth Gate-to-Source Charge
Q_gd
Gate-to-Drain Charge
Q_godr
Gate Charge Overdrive
Q_sw
Switch Charge (Q_gs2 + Q_gd)
Q_oss
Output Charge
R_G
Gate Resistance
t_d(on)
Turn-On Delay Time
t_r
Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Fall Time
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
Diode Characteristics
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
I_S
Continuous Source Current
–––
(Body Diode)
I_SM
Pulsed Source Current
Ãg (Body Diode)
–––
V_SD
Diode Forward Voltage
–––
t_rr
Reverse Recovery Time
–––
Q_rr
Reverse Recovery Charge
–––
Typ.
–––
18
0.95
1.6
1.8
-6.7
–––
–––
–––
–––
–––
46
14
6.6
14
11
20.6
35
1.3
25
37
19
15
6750
1700
730
Typ.
–––
–––
–––
27
31
Max. Units
Conditions
–––
–––
1.25
2.1
2.35
V ^VGS ^{= 0V, I}D ^{= 250µA}
mV/°C Reference to 25°C, ID = 1mA
i _mΩ V_GS = 10V, I_D = 38A
i V_GS = 4.5V, I_D = 30A
V ^VDS ^{= V}GS^{, I}D ^{= 150µA}
––– mV/°C
1.0
150
100
-100
–––
µA ^VDS ^{= 20V, V}GS ^{= 0V}
V_DS = 20V, V_GS = 0V, T_J = 125°C
nA ^VGS ^{= 20V}
V_GS = -20V
S ^VDS ^{= 13V, I}D ^=30A
69
–––
V_DS = 13V
––– nC VGS = 4.5V
–––
I_D = 30A
–––
See Fig. 15
–––
––– nC VDS = 16V, VGS = 0V
2.2
–––
Ãi Ω
V_DD = 13V, V_GS = 4.5V
–––
I_D = 30A
––– ns R_G= 1.8Ω
–––
–––
V_GS = 0V
––– pF ^VDS ^{= 13V}
–––
ƒ = 1.0MHz
Max. Units
Conditions
120
MOSFET symbol
A showing the
300
integral reverse
1.0
i ^{p-n junction diode.}
V ^TJ ^{= 25°C, I}S ^{= 30A, V}GS ^{= 0V}
41
47
i ^{ns TJ = 25°C, IF =30A}
nC di/dt = 175A/µs
Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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