IRF6646 Datasheet, PDF (2/9 Pages) International Rectifier – DirectFET Power MOSFET

IRF6646
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min.
BV_DSS
Drain-to-Source Breakdown Voltage
80
∆ΒV_DSS/∆T_J
Breakdown Voltage Temp. Coefficient –––
R_DS(on)
Static Drain-to-Source On-Resistance –––
V_GS(th)
Gate Threshold Voltage
2.8
∆V_GS(th)/∆T_J
Gate Threshold Voltage Coefficient
–––
I_DSS
Drain-to-Source Leakage Current
–––
–––
I_GSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs
Q_g
Q_gs1
Q_gs2
Q_gd
Q_godr
Q_sw
Q_oss
R_G
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss
C_oss
Forward Transconductance
17
Total Gate Charge
–––
Pre-Vth Gate-to-Source Charge
–––
Post-Vth Gate-to-Source Charge
–––
Gate-to-Drain Charge
–––
Gate Charge Overdrive
–––
Switch Charge (Q_gs2 + Q_gd)
–––
Output Charge
–––
Gate Resistance
–––
Turn-On Delay Time
–––
Rise Time
–––
Turn-Off Delay Time
–––
Fall Time
–––
Input Capacitance
–––
Output Capacitance
–––
Reverse Transfer Capacitance
–––
Output Capacitance
–––
Output Capacitance
–––
Diode Characteristics
Parameter
Min.
I_S
Continuous Source Current
–––
(Body Diode)
I_SM
Pulsed Source Current
–––
(Body Diode)
V_SD
Diode Forward Voltage
–––
t_rr
Reverse Recovery Time
–––
Q_rr
Reverse Recovery Charge
–––
Typ.
–––
0.10
7.6
–––
-11
–––
–––
–––
–––
–––
36
7.6
2.0
12
14
14
18
1.0
17
20
31
12
2060
480
120
2180
310
Typ.
–––
–––
–––
36
48
Max. Units
Conditions
––– V ^VGS ^{= 0V, I}D ^{= 250µA}
––– V/°C ^{Reference to 25°C, I}D ^{= 1mA}
9.5 mΩ ^VGS ^{= 10V, I}D ^{= 12A}
4.8
V ^VDS ^{= V}GS^{, I}D ^{= 150µA}
––– mV/°C
20
250
100
-100
–––
µA ^VDS ^{= 80V, V}GS ^{= 0V}
V_DS = 64V, V_GS = 0V, T_J = 125°C
nA ^VGS ^{= 20V}
V_GS = -20V
S ^VDS ^{= 10V, I}D ^{= 7.2A}
50
–––
V_DS = 40V
––– nC ^VGS ^{= 10V}
I_D = 7.2A
–––
See Fig. 17
–––
––– nC ^VDS ^{= 16V, V}GS ^{= 0V}
––– Ω
–––
V_DD = 40V, V_GS = 10V
–––
I_D = 7.2A
––– ns R_G=6.2Ω
–––
–––
V_GS = 0V
––– pF ^VDS ^{= 25V}
–––
ƒ = 1.0MHz
–––
V_GS = 0V, V_DS = 1.0V, f=1.0MHz
–––
V_GS = 0V, V_DS = 64V, f=1.0MHz
Max. Units
Conditions
2.5
MOSFET symbol
A showing the
96
integral reverse
p-n junction diode.
1.3 V ^TJ ^{= 25°C, I}S ^{= 7.2A, V}GS ^{= 0V}
54 ns ^TJ ^{= 25°C, I}F ^{= 7.2A, V}DD ^{= 40V}
72 nC di/dt = 100A/µs
Notes:
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by max. junction temperature.
Thermally limited and used R_θja to calculate.
2
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