IRF6644TR1PBF Datasheet, PDF (2/10 Pages) International Rectifier – Ideal for High Performance Isolated Converter Primary Switch Socket

IRF6644PbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min.
BV_DSS
Drain-to-Source Breakdown Voltage
100
∆ΒV_DSS/∆T_J
Breakdown Voltage Temp. Coefficient –––
R_DS(on)
Static Drain-to-Source On-Resistance –––
V_GS(th)
Gate Threshold Voltage
2.8
∆V_GS(th)/∆T_J
Gate Threshold Voltage Coefficient
–––
I_DSS
Drain-to-Source Leakage Current
–––
–––
I_GSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs
Forward Transconductance
15
Q_g
Q_gs1
Q_gs2
Q_gd
Q_godr
Q_sw
Q_oss
R_G
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss
C_oss
Total Gate Charge
–––
Pre-Vth Gate-to-Source Charge
–––
Post-Vth Gate-to-Source Charge
–––
Gate-to-Drain Charge
–––
Gate Charge Overdrive
–––
Switch Charge (Q_gs2 + Q_gd)
–––
Output Charge
–––
Gate Resistance
–––
Turn-On Delay Time
–––
Rise Time
–––
Turn-Off Delay Time
–––
Fall Time
–––
Input Capacitance
–––
Output Capacitance
–––
Reverse Transfer Capacitance
–––
Output Capacitance
–––
Output Capacitance
–––
Diode Characteristics
Parameter
Min.
I_S
Continuous Source Current
–––
(Body Diode)
I_SM
Pulsed Source Current
–––
(Body Diode) d
V_SD
Diode Forward Voltage
–––
t_rr
Reverse Recovery Time
–––
Q_rr
Reverse Recovery Charge
–––
Typ.
–––
0.11
10.3
–––
-10
–––
–––
–––
–––
–––
35
8.0
1.6
11.5
13
13.1
17
1.0
17
26
34
16
2210
420
100
2120
240
Typ.
–––
–––
–––
42
69
Max. Units
Conditions
––– V VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
13 mΩ VGS = 10V, ID = 10.3A c
4.8
V VDS = VGS, ID = 150µA
––– mV/°C
20
250
100
-100
–––
µA VDS = 100V, VGS = 0V
V_DS = 80V, V_GS = 0V, T_J = 125°C
nA VGS = 20V
V_GS = -20V
S VDS = 10V, ID = 6.2A
47
–––
–––
17.3
V_DS = 50V
nC VGS = 10V
I_D = 6.2A
–––
See Fig. 15
–––
––– nC VDS = 16V, VGS = 0V
2.0 Ω
–––
V_DD = 50V, V_GS = 10V c
–––
I_D = 6.2A
––– ns RG=6.2Ω
–––
–––
V_GS = 0V
––– pF VDS = 25V
–––
ƒ = 1.0MHz
–––
V_GS = 0V, V_DS = 1.0V, f=1.0MHz
–––
V_GS = 0V, V_DS = 80V, f=1.0MHz
Max. Units
Conditions
10
MOSFET symbol
A showing the
82
integral reverse
p-n junction diode.
1.3
V TJ = 25°C, IS = 6.2A, VGS = 0V c
63 ns TJ = 25°C, IF = 6.2A, VDD = 50V
100 nC di/dt = 100A/µs c
Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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