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IRF6644PBF_15 Datasheet, PDF (2/10 Pages) International Rectifier – Optimized for Synchronous Rectification | |||
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IRF6644PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
Drain-to-Source Breakdown Voltage
100
âÎVDSS/âTJ
Breakdown Voltage Temp. Coefficient âââ
RDS(on)
Static Drain-to-Source On-Resistance âââ
VGS(th)
Gate Threshold Voltage
2.8
âVGS(th)/âTJ
Gate Threshold Voltage Coefficient
âââ
IDSS
Drain-to-Source Leakage Current
âââ
âââ
IGSS
Gate-to-Source Forward Leakage
âââ
Gate-to-Source Reverse Leakage
âââ
gfs
Forward Transconductance
15
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Total Gate Charge
âââ
Pre-Vth Gate-to-Source Charge
âââ
Post-Vth Gate-to-Source Charge
âââ
Gate-to-Drain Charge
âââ
Gate Charge Overdrive
âââ
Switch Charge (Qgs2 + Qgd)
âââ
Output Charge
âââ
Gate Resistance
âââ
Turn-On Delay Time
âââ
Rise Time
âââ
Turn-Off Delay Time
âââ
Fall Time
âââ
Input Capacitance
âââ
Output Capacitance
âââ
Reverse Transfer Capacitance
âââ
Output Capacitance
âââ
Output Capacitance
âââ
Diode Characteristics
Parameter
Min.
IS
Continuous Source Current
âââ
(Body Diode)
ISM
Pulsed Source Current
âââ
(Body Diode) d
VSD
Diode Forward Voltage
âââ
trr
Reverse Recovery Time
âââ
Qrr
Reverse Recovery Charge
âââ
Typ.
âââ
0.11
10.3
âââ
-10
âââ
âââ
âââ
âââ
âââ
35
8.0
1.6
11.5
13
13.1
17
1.0
17
26
34
16
2210
420
100
2120
240
Typ.
âââ
âââ
âââ
42
69
Max. Units
Conditions
âââ V VGS = 0V, ID = 250µA
âââ V/°C Reference to 25°C, ID = 1mA
13 m⦠VGS = 10V, ID = 10.3A c
4.8
V VDS = VGS, ID = 150µA
âââ mV/°C
20
250
100
-100
âââ
µA VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 10V, ID = 6.2A
47
âââ
âââ
17.3
VDS = 50V
nC VGS = 10V
ID = 6.2A
âââ
See Fig. 15
âââ
âââ nC VDS = 16V, VGS = 0V
2.0 â¦
âââ
VDD = 50V, VGS = 10V c
âââ
ID = 6.2A
âââ ns RG=6.2â¦
âââ
âââ
VGS = 0V
âââ pF VDS = 25V
âââ
Æ = 1.0MHz
âââ
VGS = 0V, VDS = 1.0V, f=1.0MHz
âââ
VGS = 0V, VDS = 80V, f=1.0MHz
Max. Units
Conditions
10
MOSFET symbol
A showing the
82
integral reverse
p-n junction diode.
1.3
V TJ = 25°C, IS = 6.2A, VGS = 0V c
63 ns TJ = 25°C, IF = 6.2A, VDD = 50V
100 nC di/dt = 100A/µs c
Notes:
Â
Repetitive rating; pulse width limited by max. junction temperature.
 Pulse width ⤠400µs; duty cycle ⤠2%.
2
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