IRF6644PBF_15 Datasheet, PDF (1/10 Pages) International Rectifier – Optimized for Synchronous Rectification

PD - 97094A
IRF6644PbF
IRF6644TRPbF
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
l RoHS Compliant 
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
V_DSS
V_GS
R_DS(on)
100V max ±20V max 10.3mΩ@ 10V
Q_{g tot}
Q_gd
V_gs(th)
35nC 11.5nC
3.7V
MN
DirectFET™ ISOMETRIC
SH
SJ
SP
MZ
MN
Description
The IRF6644PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6644PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom
applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device
coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability
improvements, and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
Max.
Units
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
I_DM
E_AS
I_AR
Drain-to-Source Voltage
Gate-to-Source Voltage
e Continuous Drain Current, V_GS @ 10V
e Continuous Drain Current, V_GS @ 10V
f Continuous Drain Current, V_GS @ 10V
g Pulsed Drain Current
h Single Pulse Avalanche Energy
Ãg Avalanche Current
100
V
±20
10.3
8.3
A
60
82
220
mJ
6.2
A
0.08
0.06
ID = 6.2A
13
TA= 25°C
12
VGS = 7.0V
0.04
TJ = 125°C
0.02
0.00
4
TJ = 25°C
6
8
10 12 14 16
VGS, Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance Vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
11
VGS = 8.0V
VGS = 10V
10
VGS = 15V
9
0
4
8
12
16
20
ID, Drain Current (A)
Fig 2. Typical On-Resistance Vs. Drain Current
„ T_C measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting T_J = 25°C, L = 12mH, R_G = 25Ω, I_AS = 6.2A.
1
8/18/06