IRF6633PBF_15 Datasheet, PDF (2/10 Pages) International Rectifier – Low Conduction Losses and Switching Losses

IRF6633PbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min.
BV_DSS
∆ΒV_DSS/∆T_J
R_DS(on)
Drain-to-Source Breakdown Voltage
20
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
–––
V_GS(th)
Gate Threshold Voltage
1.4
∆V_GS(th)/∆T_J
Gate Threshold Voltage Coefficient
–––
I_DSS
Drain-to-Source Leakage Current
–––
–––
I_GSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs
Forward Transconductance
35
Q_g
Total Gate Charge
–––
Q_gs1
Pre-Vth Gate-to-Source Charge
–––
Q_gs2
Post-Vth Gate-to-Source Charge
–––
Q_gd
Gate-to-Drain Charge
–––
Q_godr
Gate Charge Overdrive
–––
Q_sw
Switch Charge (Q_gs2 + Q_gd)
–––
Q_oss
Output Charge
–––
R_G
Gate Resistance
–––
t_d(on)
Turn-On Delay Time
–––
t_r
Rise Time
–––
t_d(off)
Turn-Off Delay Time
–––
t_f
Fall Time
–––
C_iss
Input Capacitance
–––
C_oss
Output Capacitance
–––
C_rss
Reverse Transfer Capacitance
–––
Diode Characteristics
Parameter
Min.
I_S
Continuous Source Current
–––
@T_C=25°C (Body Diode)
I_SM
Pulsed Source Current
–––
(Body Diode) g
V_SD
Diode Forward Voltage
–––
t_rr
Reverse Recovery Time
–––
Q_rr
Reverse Recovery Charge
–––
Typ.
–––
16
4.1
7.0
1.8
-5.2
–––
–––
–––
–––
–––
11
3.3
1.2
4.0
2.5
5.2
8.8
1.5
9.7
31
12
4.3
1250
630
200
Typ.
–––
–––
0.8
18
32
Max. Units
Conditions
––– V VGS = 0V, ID = 250µA
––– mV/°C Reference to 25°C, ID = 1mA
5.6 mΩ VGS = 10V, ID = 16A i
9.4
V_GS = 4.5V, I_D = 13A i
2.2
V VDS = VGS, ID = 250µA
––– mV/°C
1.0
150
100
-100
–––
µA VDS = 16V, VGS = 0V
V_DS = 16V, V_GS = 0V, T_J = 125°C
nA VGS = 20V
V_GS = -20V
S VDS = 10V, ID = 13A
17
–––
V_DS = 10V
––– nC VGS = 4.5V
–––
I_D = 13A
–––
See Fig. 15
–––
––– nC VDS = 10V, VGS = 0V
––– Ω
–––
V_DD = 16V, V_GS = 4.5V i
–––
I_D = 13A
––– ns Clamped Inductive Load
–––
–––
V_GS = 0V
––– pF VDS = 10V
–––
ƒ = 1.0MHz
Max. Units
Conditions
53
MOSFET symbol
A showing the
132
integral reverse
p-n junction diode.
1.0
V TJ = 25°C, IS = 13A, VGS = 0V i
27 ns TJ = 25°C, IF = 13A
48 nC di/dt = 500A/µs i
Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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