IRF6618TR1PBF Datasheet, PDF (2/9 Pages) International Rectifier – Lead-Free (Qualified up to 260°C Reflow)

IRF6618PbF
Static @ T_J = 25°C (unless otherwise specified)
BV_DSS
∆ΒV_DSS/∆T_J
R_DS(on)
V_GS(th)
∆V_GS(th)/∆T_J
I_DSS
I_GSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
–––
gfs
Forward Transconductance
100
Q_g
Total Gate Charge
–––
Q_gs1
Pre-Vth Gate-to-Source Charge
–––
Q_gs2
Post-Vth Gate-to-Source Charge
–––
Q_gd
Gate-to-Drain Charge
–––
Q_godr
Gate Charge Overdrive
–––
Q_sw
Switch Charge (Q_gs2 + Q_gd)
–––
Q_oss
Output Charge
–––
R_G
Gate Resistance
–––
t_d(on)
Turn-On Delay Time
–––
t_r
Rise Time
–––
t_d(off)
Turn-Off Delay Time
–––
t_f
Fall Time
–––
C_iss
Input Capacitance
–––
C_oss
Output Capacitance
–––
C_rss
Reverse Transfer Capacitance
–––
Diode Characteristics
Parameter
Min.
I_S
Continuous Source Current
–––
(Body Diode)
I_SM
Pulsed Source Current
–––
Ãg (Body Diode)
V_SD
Diode Forward Voltage
–––
t_rr
Reverse Recovery Time
–––
Q_rr
Reverse Recovery Charge
–––
Typ.
–––
23
1.7
–––
1.64
-5.7
–––
–––
–––
–––
–––
–––
43
12
4.0
15
12
19
28
1.0
21
71
27
8.1
5640
1260
570
Typ.
–––
–––
0.78
43
46
Max.
–––
–––
2.2
3.4
2.35
–––
5.0
1.0
150
100
-100
–––
65
–––
–––
23
–––
–––
–––
2.2
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V V_GS = 0V, I_D = 250µA
mV/°C Reference to 25°C, I_D = 1mA
i ^mΩ V_GS = 10V, I_D = 30A
i V_GS = 4.5V, I_D = 24A
V V_DS = V_GS, I_D = 250µA
mV/°C
V_DS = 30V, V_GS = 0V
µA V_DS = 24V, V_GS = 0V
V_DS = 24V, V_GS = 0V, T_J = 150°C
nA V_GS = 20V
V_GS = -20V
S V_DS = 15V, I_D = 24A
V_DS = 15V
nC V_GS = 4.5V
I_D = 24A
See Fig. 14
nC V_DS = 15V, V_GS = 0V
Ω
Ãi V_DD = 15V, V_GS = 4.5V
I_D = 24A
ns Clamped Inductive Load
See Fig. 15 & 16
V_GS = 0V
pF V_DS = 15V
ƒ = 1.0MHz
Max. Units
Conditions
89
MOSFET symbol
D
A showing the
240
integral reverse
G
1.2
i ^{p-n junction diode.}
S
V T_J = 25°C, I_S = 24A, V_GS = 0V
65
69
ià ^{ns TJ = 25°C, IF = 24A}
nC di/dt = 100A/µs See Fig. 17
Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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