IRF6618TR1PBF Datasheet, PDF (1/9 Pages) International Rectifier – Lead-Free (Qualified up to 260°C Reflow)

PD - 97240A
l RoHs Compliant 
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
IRF6618PbF
IRF6618TRPbF
DirectFET™ Power MOSFET ‚
V_DSS
V_GS
R_DS(on)
R_DS(on)
30V max ±20V max 2.2mΩ@ 10V 3.4mΩ@ 4.5V
Q_{g tot} Q_gd
Q_gs2
Q_rr
Q_oss V_gs(th)
43nC 15nC 4.0nC 46nC 28nC 1.64V
Applicable DirectFET Package/Layout Pad (see p.7, 8 for details)
MT
DirectFET™ ISOMETRIC
SQ
SX
ST
MQ
MX
MT
Description
The IRF6618PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6618PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF6618PbF has been optimized for
parameters that are critical in synchronous buck converter’s SyncFET sockets.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_C = 25°C
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
E_AS
I_AR
Gate-to-Source Voltage
e Continuous Drain Current, V_GS @ 10V
e Continuous Drain Current, VGS @ 10V
f Continuous Drain Current, V_GS @ 10V
g Pulsed Drain Current
h Single Pulse Avalanche Energy
Ãg Avalanche Current
Max.
30
±20
170
30
24
240
210
24
Units
V
A
mJ
A
6
5
ID = 30A
4
TJ = 125°C
3
2
1
TJ = 25°C
0
2 3 4 5 6 7 8 9 10
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
6.0
5.0 ^{ID= 24A}
4.0
VDS= 24V
VDS= 15V
3.0
2.0
1.0
0.0
0
10
20
30
40
50
60
QG Total Gate Charge (nC)
Fig 2. Total Gate Charge vs. Gate-to-Source Voltage
„ T_C measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting T_J = 25°C, L = 0.75mH, R_G = 25Ω, I_AS = 24A.
1
08/17/07