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| IRF6617PBF Datasheet, PDF (2/9 Pages) International Rectifier – Lead-Free (Qualified up to 260°C Reflow) | |||
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IRF6617PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
âÎVDSS/âTJ
RDS(on)
Drain-to-Source Breakdown Voltage
30
Breakdown Voltage Temp. Coefficient âââ
Static Drain-to-Source On-Resistance âââ
âââ
VGS(th)
âVGS(th)/âTJ
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
âââ
âââ
âââ
IGSS
Gate-to-Source Forward Leakage
âââ
Gate-to-Source Reverse Leakage
âââ
gfs
Forward Transconductance
39
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Total Gate Charge
âââ
Pre-Vth Gate-to-Source Charge
âââ
Post-Vth Gate-to-Source Charge
âââ
Gate-to-Drain Charge
âââ
Gate Charge Overdrive
âââ
Switch Charge (Qgs2 + Qgd)
âââ
Output Charge
âââ
Turn-On Delay Time
âââ
Rise Time
âââ
Turn-Off Delay Time
âââ
Fall Time
âââ
Input Capacitance
âââ
Output Capacitance
âââ
Reverse Transfer Capacitance
âââ
Typ.
âââ
25
6.2
7.9
âââ
-5.4
âââ
âââ
âââ
âââ
âââ
11
3.1
1.0
4.0
2.9
5.0
10
11
34
12
3.7
1300
430
160
Max. Units
Conditions
âââ
âââ
8.1
10.3
2.35
âââ
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
m⦠VGS = 10V, ID = 15A e
VGS = 4.5V, ID = 12A e
V VDS = VGS, ID = 250µA
mV/°C
1.0
150
100
-100
âââ
17
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 12A
âââ
VDS = 15V
âââ nC VGS = 4.5V
âââ
ID = 12A
âââ
See Fig. 16
âââ
âââ nC VDS = 15V, VGS = 0V
âââ
VDD = 16V, VGS = 4.5V e
âââ
ID = 12A
âââ ns Clamped Inductive Load
âââ
âââ
VGS = 0V
âââ pF VDS = 15V
âââ
Æ = 1.0MHz
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) c
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
âââ âââ 53
MOSFET symbol
D
âââ âââ 120
âââ 0.81 1.0
âââ 16 24
âââ 7.2 11
A showing the
G
integral reverse
S
p-n junction diode.
V TJ = 25°C, IS = 12A, VGS = 0V e
ns TJ = 25°C, IF = 12A
nC di/dt = 100A/µs e
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
 Starting TJ = 25°C, L = 0.40mH,
RG = 25â¦, IAS = 12A.
 Pulse width ⤠400µs; duty cycle ⤠2%.
 Surface mounted on 1 in. square Cu board.
Â
Used double sided cooling, mounting pad.
 Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
 TC measured with thermal couple mounted to top (Drain) of part.
 Rθ is measured at TJ of approximately 90°C.
 Click on this section to link to the appropriate technical paper.
 Click on this section to link to the DirectFET Website.
2
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