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| IRF6617PBF Datasheet, PDF (1/9 Pages) International Rectifier – Lead-Free (Qualified up to 260°C Reflow) | |||
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l RoHS Compliant Â
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible Â
l Compatible with existing Surface Mount Techniques Â
PD -97082
IRF6617PbF
IRF6617TRPbF
DirectFETÂ Power MOSFET Â
VDSS
30V
RDS(on) max Qg(typ.)
8.1mâ¦@VGS = 10V
10.3mâ¦@VGS = 4.5V
11nC
ST
Applicable DirectFET Outline and Substrate Outline (see p.7, 8 for details)
DirectFETÂ ISOMETRIC
SQ
SX
ST
MQ
MX
MT
Description
The IRF6617PbF combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to
achieve the lowest on-state resistance in a package that has the footprint of a Micro8⢠and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing meth-
ods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improv-
ing previous best thermal resistance by 80%.
The IRF6617PbF balances both low resistance and low charge along with ultra low package inductance to reduce both
conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that
power the latest generation of processors operating at higher frequencies. The IRF6617PbF has been optimized for param-
eters that are critical in synchronous buck converters including RDS(on) and gate charge to minimize losses in the control FET
socket.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain-to-Source Voltage
30
V
VGS
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TC = 25°C
PD @TA = 25°C
PD @TA = 70°C
EAS
IAR
Gate-to-Source Voltage
i Continuous Drain Current, VGS @ 10V
Ãf Continuous Drain Current, VGS @ 10V
f Continuous Drain Current, VGS @ 10V
 Pulsed Drain Current
i Power Dissipation
f Power Dissipation
f Power Dissipation
d Single Pulse Avalanche Energy
ÃÂ Avalanche Current
±20
55
14
A
11
120
42
2.1
W
1.4
27
mJ
12
A
Linear Derating Factor
0.017
W/°C
TJ
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
RθJA
fj Junction-to-Ambient
RθJA
gj Junction-to-Ambient
RθJA
hj Junction-to-Ambient
RθJC
ij Junction-to-Case
RθJ-PCB
Junction-to-PCB Mounted
-40 to + 150
Typ.
âââ
12.5
20
âââ
1.0
Max.
58
âââ
âââ
3.0
âââ
°C
Units
°C/W
Notes  through  are on page 2
www.irf.com
1
5/3/06
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