IRF6218 Datasheet, PDF (2/7 Pages) International Rectifier – SMPS MOSFET

IRF6218
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
Drain-to-Source Breakdown Voltage -150 ––– ––– V V_GS = 0V, I_D = -250µA
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient ––– -0.17 ––– V/°C Reference to 25°C, I_D = -1mA
R_DS(on)
f Static Drain-to-Source On-Resistance ––– 120 150 mΩ V_GS = -10V, I_D = -16A
V_GS(th)
Gate Threshold Voltage
-3.0 ––– -5.0 V V_DS = V_GS, I_D = -250µA
I_DSS
Drain-to-Source Leakage Current
––– ––– -25 µA V_DS = -120V, V_GS = 0V
––– ––– -250
V_DS = -120V, V_GS = 0V, T_J = 150°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– -100 nA V_GS = -20V
Gate-to-Source Reverse Leakage
––– ––– 100
V_GS = 20V
Dynamic @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss
C_oss
C_oss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
11 ––– –––
––– 71 110
––– 21 –––
––– 32 –––
––– 21 –––
––– 70 –––
––– 35 –––
––– 30 –––
––– 2210 –––
––– 370 –––
––– 89 –––
––– 2220 –––
––– 170 –––
––– 340 –––
S V_DS = -50V, I_D = -16A
I_D = -16A
nC V_DS = -120V
f V_GS = -10V
V_DD = -75V
ns I_D = -16A
R_G = 3.9Ω
f V_GS = -10V
V_GS = 0V
V_DS = -25V
pF ƒ = 1.0MHz
V_GS = 0V, V_DS = -1.0V, ƒ = 1.0MHz
V_GS = 0V, V_DS = -120V, ƒ = 1.0MHz
V_GS = 0V, V_DS = 0V to -120V
Avalanche Characteristics
E_AS
I_AR
d ^Parameter
Single Pulse Avalanche Energy
Ù Avalanche Current
Typ.
–––
–––
Max.
210
-16
Units
mJ
A
Diode Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
––– ––– -27
MOSFET symbol
D
A showing the
––– ––– -110
integral reverse
G
––– ––– -1.6
p-n junction diode.
S
f V T_J = 25°C, I_S = -16A, V_GS = 0V
–––
–––
150
860
–––
–––
f ^{ns TJ = 25°C, IF = -16A, VDD = -25V}
nC di/dt = -100A/µs
2
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