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IRF6218 Datasheet, PDF (1/7 Pages) International Rectifier – SMPS MOSFET
PD - 95862
SMPS MOSFET
IRF6218
HEXFET® Power MOSFET
Applications
l Reset Switch for Active Clamp
Reset DC-DC converters
VDSS
RDS(on) max
ID
: -150V 150m @VGS = -10V -27A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design (See
G
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
D
S
TO-220AB
Absolute Maximum Ratings
Parameter
VDS
Drain-to-Source Voltage
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
c Pulsed Drain Current
Maximum Power Dissipation
dv/dt
TJ
TSTG
Linear Derating Factor
h Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
g Junction-to-Case
RθCS
g Case-to-Sink, Flat, Greased Surface
RθJA
g Junction-to-Ambient
Notes  through „ are on page 7
www.irf.com
Max.
-150
± 20
-27
-19
-110
250
1.6
8.2
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
0.61
–––
62
Units
V
A
W
W/°C
V/ns
°C
Units
°C/W
1
04/22/04