IRF2903ZSPBF Datasheet, PDF (2/11 Pages) International Rectifier – AUTOMOTIVE MOSFET

IRF2903ZS/ZLPbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
∆V_(BR)DSS/∆T_J
R_DS(on)
V_GS(th)
gfs
I_DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Q_g
Total Gate Charge
Q_gs
Gate-to-Source Charge
Q_gd
Gate-to-Drain ("Miller") Charge
t_d(on)
Turn-On Delay Time
t_r
Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Fall Time
L_D
Internal Drain Inductance
30 ––– ––– V VGS = 0V, ID = 250µA
e ^{––– 0.021 ––– V/°C Reference to 25°C, ID = 1mA}
––– 1.9 2.4 mΩ VGS = 10V, ID = 75A
2.0 ––– 4.0 V VDS = VGS, ID = 150µA
120 ––– ––– S VDS = 10V, ID = 75A
––– ––– 20 µA VDS = 30V, VGS = 0V
––– ––– 250
V_DS = 30V, V_GS = 0V, T_J = 125°C
––– ––– 200 nA VGS = 20V
––– ––– -200
V_GS = -20V
––– 160 240
I_D = 75A
–––
–––
51
58
–––
–––
e nC VDS = 24V
V_GS = 10V
––– 24 –––
V_DD = 15V
––– 100 –––
I_D = 75A
–––
–––
48
37
–––
–––
e ns RG = 3.2 Ω
V_GS = 10V
––– 4.5 –––
Between lead,
nH 6mm (0.25in.)
L_S
Internal Source Inductance
––– 7.5 –––
from package
and center of die contact
C_iss
C_oss
C_rss
C_oss
C_oss
C_oss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 6320 –––
––– 1980 –––
––– 1100 –––
––– 5930 –––
––– 2010 –––
––– 3050 –––
V_GS = 0V
V_DS = 25V
pF ƒ = 1.0MHz
V_GS = 0V, V_DS = 1.0V, ƒ = 1.0MHz
f ^{VGS = 0V, VDS = 24V, ƒ = 1.0MHz}
V_GS = 0V, V_DS = 0V to 24V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I_S
Continuous Source Current
––– ––– 75
MOSFET symbol
(Body Diode)
A showing the
I_SM
Ù ^{Pulsed Source Current}
(Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
––– ––– 1020
integral reverse
––– ––– 1.3
e ^{p-n junction diode.}
V T_J = 25°C, I_S = 75A, V_GS = 0V
––– 34
––– 29
51
44
e ^{ns TJ = 25°C, IF = 75A, VDD = 15V}
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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