IRF2903ZSPBF Datasheet, PDF (1/11 Pages) International Rectifier – AUTOMOTIVE MOSFET

PD - 96098
AUTOMOTIVE MOSFET
IRF2903ZSPbF
IRF2903ZLPbF
Features
l Advanced Process Technology
HEXFET^® Power MOSFET
l Ultra Low On-Resistance
l 175°C Operating Temperature
D
V_DSS = 30V
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
R_DS(on) = 2.4mΩ
l Lead-Free
S
I_D = 75A
Description
Specifically designed for Automotive applications,
this HEXFET^® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
D
D
S
D
G
D²Pak
S
D
G
TO-262
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
™ ^{ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
d ^VGS
Gate-to-Source Voltage
E_{AS (Thermally limited)} Single Pulse Avalanche Energy
E_AS (Tested )
I_AR
E_AR
h Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
g Repetitive Avalanche Energy
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R_θJC
R_θJA
R_θJA
j Junction-to-Case
j Junction-to-Ambient
ij Junction-to-Ambient (PCB Mount, steady state)
www.irf.com
Max.
235
166
75
1020
231
1.54
± 20
231
820
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
–––
Max.
0.65
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
1
04/06/07