IRF1405ZPBF_15 Datasheet, PDF (2/12 Pages) International Rectifier – Advanced Process Technology

IRF1405Z/S/LPbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
∆V_(BR)DSS/∆T_J
R_DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
55 ––– –––
––– 0.049 –––
––– 3.7 4.9
V V_GS = 0V, I_D = 250µA
e ^{V/°C Reference to 25°C, ID = 1mA}
mΩ _{VGS = 10V, ID = 75A}
V_GS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V V_DS = V_GS, I_D = 250µA
gfs
Forward Transconductance
88 ––– ––– S V_DS = 25V, I_D = 75A
I_DSS
Drain-to-Source Leakage Current
––– ––– 20 µA V_DS = 55V, V_GS = 0V
––– ––– 250
V_DS = 55V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 200 nA V_GS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
V_GS = -20V
Q_g
Total Gate Charge
––– 120 180
I_D = 75A
Q_gs
Q_gd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
–––
–––
31
46
–––
–––
e nC VDS = 44V
V_GS = 10V
t_d(on)
Turn-On Delay Time
––– 18 –––
V_DD = 25V
t_r
Rise Time
––– 110 –––
I_D = 75A
t_d(off)
t_f
Turn-Off Delay Time
Fall Time
–––
–––
48
82
–––
–––
e ns RG = 4.4Ω
V_GS = 10V
L_D
Internal Drain Inductance
––– 4.5 –––
Between lead,
D
L_S
Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
C_iss
C_oss
C_rss
C_oss
C_oss
C_oss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 4780 –––
––– 770 –––
––– 410 –––
––– 2730 –––
––– 600 –––
––– 910 –––
and center of die contact
S
V_GS = 0V
V_DS = 25V
pF ƒ = 1.0MHz
V_GS = 0V, V_DS = 1.0V, ƒ = 1.0MHz
f ^{VGS = 0V, VDS = 44V, ƒ = 1.0MHz}
V_GS = 0V, V_DS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I_S
Continuous Source Current
––– ––– 75
MOSFET symbol
D
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
A showing the
––– ––– 600
integral reverse
G
––– ––– 1.3
e ^{p-n junction diode.}
S
V T_J = 25°C, I_S = 75A, V_GS = 0V
––– 30
––– 30
46
45
e ^{ns TJ = 25°C, IF = 75A, VDD = 25V}
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by T_Jmax, starting T_J = 25°C, L = 0.10mH
R_G = 25Ω, I_AS = 75A, V_GS =10V. Part not
… Limited by T_Jmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
† This value determined from sample failure population.
100% tested to this value in production.
recommended for use above this value.
ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
‡ This is applied to D²Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
„ C_oss eff. is a fixed capacitance that gives the same
soldering techniques refer to application note #AN-994.
charging time as C_oss while V_DS is rising from 0 to 80%
V_DSS .
2
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