IRF1405ZPBF_15 Datasheet, PDF (1/12 Pages) International Rectifier – Advanced Process Technology

PD - 97018A
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
This HEXFET^® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
IRF1405ZPbF
IRF1405ZSPbF
IRF1405ZLPbF
HEXFET^® Power MOSFET
D
V_DSS = 55V
R_DS(on) = 4.9mΩ
G
S
I_D = 75A
TO-220AB
D²Pak
TO-262
IRF1405ZPbF IRF1405ZSPbF IRF1405ZLPbF
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C _{Continuous Drain Current, VGS @ 10V} (Silicon Limited)
I_D @ T_C = 100°C _{Continuous Drain Current, VGS @ 10V}
I_D @ T_C = 25°C _{Continuous Drain Current, VGS @ 10V} (Package Limited)
I_DM
™ Pulsed Drain Current
P_D @T_C = 25°C _{Power Dissipation}
Linear Derating Factor
V_GS
Gate-to-Source Voltage
d ^EAS (Thermally limited) Single Pulse Avalanche Energy
E_AS (Tested )
h Single Pulse Avalanche Energy Tested Value
I_AR
Ù Avalanche Current
E_AR
g Repetitive Avalanche Energy
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
R_θCS
R_θJA
R_θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
i Junction-to-Ambient (PCB Mount, steady state)
HEXFET^® is a registered trademark of International Rectifier.
www.irf.com
Max.
150
110
75
600
230
1.5
± 20
270
420
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
0.65
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
07/14/10